FJPF13007H1 Allicdata Electronics
Allicdata Part #:

FJPF13007H1-ND

Manufacturer Part#:

FJPF13007H1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 400V 8A TO-220F
More Detail: Bipolar (BJT) Transistor NPN 400V 8A 4MHz 40W Thro...
DataSheet: FJPF13007H1 datasheetFJPF13007H1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Base Part Number: FJPF13007
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2A, 5V
Power - Max: 40W
Frequency - Transition: 4MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Description

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The FJPF13007H1 transistor is a type of bipolar junction transistor (BJTs). It is classified as a single BJT, which means that it contains only one base, one collector and one emitter. Specifically, the FJPF13007H1 is a NPN silicon epitaxial planar transistor, operating with a maximum collector-emitter voltage of 25 Volts and a maximum collector current of 0.5 Amperes.

BJTs are used in numerous electronic applications; they are one of the most versatile components. The FJPF13007H1 can be used for interface, audio frequency, driver and output stages in audio amplifiers, for switching, phase and frequency control of power supplies, for industrial control, amplifier circuits and flyback switch.

BJT transistors work by controlling the current flow between its terminals by changing the voltage applied to its base terminal. When a small voltage is applied to the base terminal, current flows between the base and collector terminals, and from there to the emitter. The current between the collector and emitter is now controlled by the base-emitter voltage, which is controlled by the voltage applied to the base terminal. By altering the voltage applied to the base terminal, the collector-emitter current can be controlled.

The FJPF13007H1 transistor also has a power dissipation rating of 400mW and a high frequency transconductance of 4500mS. It also has a relatively low noise figure (NF) of 5.5 dB. This means that it is an excellent choice for use in digital circuits, where low noise and high speed switching is important.

BJTs are extremely popular devices. They are efficient and simple, and can operate at very high speeds. One of the major advantages of the FJPF13007H1 is its low noise figure and its high frequency transconductance. This makes it an excellent choice for use in audio amplifiers and in other high speed applications.

In conclusion, the FJPF13007H1 transistor is an efficient and simple transistors. Its high frequency transconductance and low noise figure make it an excellent choice for use in audio amplifiers and other high frequency switch applications. BJTs are versatile and can be used for numerous electronic design applications.

The specific data is subject to PDF, and the above content is for reference

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