FJPF3305H2TU Allicdata Electronics
Allicdata Part #:

FJPF3305H2TU-ND

Manufacturer Part#:

FJPF3305H2TU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 400V 4A TO-220F
More Detail: Bipolar (BJT) Transistor NPN 400V 4A 4MHz 30W Thro...
DataSheet: FJPF3305H2TU datasheetFJPF3305H2TU Datasheet/PDF
Quantity: 502
Stock 502Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 26 @ 1A, 5V
Power - Max: 30W
Frequency - Transition: 4MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Description

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The FJPF3305H2TU is a type of single bipolar junction transistor (BJT). A bipolar junction transistor is a semiconductor device consisting of three doped regions that can be used as either an electronic switch or an amplifier. Its abbreviation, BJT, stands for bi-polar junction transistor.

The FJPF3305H2TU is normally used in small signal and amplifier applications. It is also often used with integrated circuits in digital applications, including computers, mobile phones, and television sets. As a switching transistor, it is used for controlling the voltage and current in the circuit, either by switching it on or off, or by adjusting the voltage or current output levels.

The FJPF3305H2TU is made of a PNP transistor in a 2-pin plastic SOT-23 package. It has a collector-emitter breakdown voltage of 40 volts, a collector current of 150mA, a gain of 250 to 500, and a maximum collector power dissipation of 500mW. The base-emitter saturation or cutoff voltage is typically less than 1.1 volts.

The FJPF3305H2TU works by controlling the flow of electrons through the semiconductor device. When the base-emitter junction is forward biased, electrons flow from the emitter to the base, causing an accumulation of charge carriers in the base region. This in turn causes an inversion of the base-emitter junction, allowing electrons to flow from the collector to the emitter, creating a current in the external circuit.

When the base-emitter junction is reverse biased, electrons flow from the base to the emitter, causing no current to flow in the external circuit. This is referred to as the transistor’s cutoff state. Depending on bias, the current can be amplified or cut off, allowing the FJPF3305H2TU to be used for either switching or amplifier applications.

The FJPF3305H2TU is often used in a saturated circuit, which is one in which the transistor is saturated, meaning that the collector-emitter voltage does not rise with the input current. This allows for a high current gain, as the collector current is much larger than the base current. It is often used in combination with other transistors or components to form complex circuits.

Overall, the FJPF3305H2TU is a versatile and reliable transistor that can be used in a variety of applications. It can be used as either an electronic switch or an amplifier, and its small size and low power consumption make it ideal for use with integrated circuits. Its ability to quickly switch between saturated and cutoff states makes it particularly useful for commercial and consumer applications, including computers, television sets, and mobile phones.

The specific data is subject to PDF, and the above content is for reference

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