FJPF3305H1TU Allicdata Electronics
Allicdata Part #:

FJPF3305H1TU-ND

Manufacturer Part#:

FJPF3305H1TU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 400V 4A TO-220F
More Detail: Bipolar (BJT) Transistor NPN 400V 4A 4MHz 30W Thro...
DataSheet: FJPF3305H1TU datasheetFJPF3305H1TU Datasheet/PDF
Quantity: 303
Stock 303Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 19 @ 1A, 5V
Power - Max: 30W
Frequency - Transition: 4MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Description

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FJPF3305H1TU Application Field and Working Principle

The FJPF3305H1TU is a single BJT transistor. A bipolar transistor is a type of electronic component that efficiently amplifies electric signals. It works by allowing an electric signal to control the electric current flow between two terminals, known as source and load. The FJPF3305H1TU has a maximum collector-emitter voltage of 30V and an emitter-base breakdown voltage of 7V. It is commonly used in devices such as power amplifiers, analog signal processing, signal switching devices, and semiconducting devices.

Application Field

The FJPF3305H1TU has many applications in consumer and commercial electronics. Its main application lies in the field of power electronics. It is used in a variety of power applications, including AC-DC and DC-DC converters, motor control, power supplies, and switch-mode power supplies. Due to its high-power capacity, it is also an ideal choice for power amplifiers, power switch circuits, and audio signal amplifiers. Additionally, it can be found in AC motors, stepper motors and other electromechanical devices.

The FJPF3305H1TU is also used in analog signal processing. It is a popular choice for amplifiers, filters, signal switches, signal detectors, and oscillators. It can also be used in telecommunications, such as in telephone relays and line circuits, where it acts as a signal amplifier.

Finally, it is also used as a semiconducting device in the manufacture of devices such as lithium ion batteries, silicon photovoltaic cells, and LED lights.

Working Principle

A bipolar transistor works by allowing an electric current to flow from the collector terminal to the emitter terminal when a small signal voltage is applied to the base terminal. This is known as the active mode of operation. This Electric current can then be used to control the switching of larger currents.

When a large signal voltage is applied to the base terminal, the electric current flowing from the collector to the emitter no longer passes through the base terminal, but instead passes directly through the transistor. This is known as the saturation mode of operation.

The transistor can also be operated in reverse-active mode and cutoff modes. When operated in reverse-active mode, an electric current flows from the emitter to the collector. When operated in cutoff mode, there is no current flow regardless of the input voltage applied to the base terminal.

The FJPF3305H1TU has a maximum collector-emitter voltage of 30V and an emitter-base breakdown voltage of 7V. These two values determine the maximum voltage and current levels that the transistor can handle.

Conclusion

The FJPF3305H1TU is a single BJT transistor with a maximum collector-emitter voltage of 30V and an emitter-base breakdown voltage of 7V. It is commonly used in power electronics, analog signal processing, telecommunications, and the manufacture of semiconducting devices. The FJPF3305H1TU works by allowing a small voltage to control the flow of an electric current between two terminals, which can then be used to control the switching of larger currents. It can also be operated in different modes depending on the voltage applied.

The specific data is subject to PDF, and the above content is for reference

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