FJPF2145TU

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The FJPF2145TU is a type of bipolar junction transistor (BJT) specifically designed for various applications requiring high switching. In particular, its features suitable for most DC applications include a low collector-emitter saturation voltage, a low on-resistance, and a current-gain range of 35 to 55. It should be noted, however, that this model is not intended for use in audio applications.

A bipolar junction transistor is constructed of two p-n junctions between a base and a collector terminal. In this particular case, the FJPF2145TU also has an emitter terminal. When a voltage is applied between the base and the emitter of the transistor, current begins to flow from the base to the emitter. This is known as the forward bias and is what causes the transistor to switch on. The amount of current that flows is then determined by the voltage between the collector and the emitter, which is referred to as the collector-emitter voltage.

The FJPF2145TU has a very low collector-emitter saturation voltage (VCE) of 0.1 V. This means that when the transistor is saturated, the collector-emitter voltage is very low, enabling the transistor to switch faster. In addition, the on-resistance of this model is also quite low, allowing a lower voltage to be used to switch it on. This helps reduce power consumption and heat dissipation.

The FJPF2145TU has a typical current gain range of 35 to 55, making it suitable for most DC applications. This parameter is also known as the common-emitter current gain (hFE). It is defined as the ratio of the change in collector current to the change in base current when the collector-emitter voltage is held constant, thus indicating the amount of current that can be amplified when a certain voltage is applied to the base of the transistor.

The FJPF2145TU can be used for various applications, including switched DC circuits with low-voltage, low-power requirements. It is also suitable for use in power control circuits, such as integrated circuits (ICs) and in relay control applications. In addition, this model also has a relatively low reverse leakage current, which makes it suitable for use in high frequency and high voltage circuits.

In conclusion, the FJPF2145TU is a type of bipolar junction transistor specifically designed for DC applications which require high switching. It has a low collector-emitter saturation voltage, a low on-resistance, and a current-gain range of 35 to 55, making it suitable for a broad range of DC circuits. Additionally, its low reverse leakage current allows for use in high frequency and high voltage applications.

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