Allicdata Part #: | FJPF5027RYDTU-ND |
Manufacturer Part#: |
FJPF5027RYDTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 800V 3A TO-220F |
More Detail: | Bipolar (BJT) Transistor NPN 800V 3A 15MHz 40W Thr... |
DataSheet: | FJPF5027RYDTU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 800V |
Vce Saturation (Max) @ Ib, Ic: | 2V @ 300mA, 1.5A |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 200mA, 5V |
Power - Max: | 40W |
Frequency - Transition: | 15MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F-3 |
Base Part Number: | FJPF5027 |
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The FJPF5027RYDTU is a type of bipolar transistors, more commonly known as BJT or Bipolar Junction Transistors. BJTs are a type of single semiconductor device with base, emitter and collector terminals. FJPF5027RYDTU transistors are mostly small signal transistors, with break frequency ranging from a few tens of MHz to about 500 MHz, making them ideal for low-frequency applications. These devices have a typical gain of 500 at collector current of 10mA and the frequency of operation is around 1GHz.
BJTs work by allowing current flow between the collector and emitter junctions when the base terminal is forward biased. The current flow is controlled by the amount of current in the base terminal. This type of transistor finds its application in a wide range of low-frequency applications, including RF switches for antenna switching, amplifier stages for VHF radio systems, low power audio preamplifiers, current limiting circuits, analog gate circuits and oscillator circuits.
FJPF5027RYDTU transistors are designed to operate in an environment with temperature ranging from -65°C to 150°C, and can be operated in a range of voltage from 5V up to 35V. They are extremely reliable with typical on-state collector emitter saturation voltage of 0.2V. The FJPF5027RYDTU transistors also feature low power consumption and good thermal immunity which makes them suitable for many applications.
The FJPF5027RYDTU transistors are often used in digital logic circuits. They have a built-in protection against overvoltage and undervoltage, allowing them to be used in a variety of low-power digital IC applications. These transistors also have devices for thermal protection and can be used for thermal protection of digital circuits. They also have built-in protection for reverse voltage for protecting digital circuits from short circuit or other devices.
FJPF5027RYDTU transistors are also suitable for high-voltage, low-power signal conditioning applications such as current level detection, temperature and overcurrent protection. The transistors can handle signals up to 20V, making them ideal for signal processing applications. They also have excellent noise immunity and can be used in noisy signal processing environments.
FJPF5027RYDTU transistors are widely used in communications and computing applications, such as frequency modulation, data transmission and data processing. They can be used for interfaces in digital systems such as logic controllers, multi-processor systems and peripheral systems. They are widely used in automotive and industrial automation solutions, providing reliable low-power performance in high-voltage environments.
The specific data is subject to PDF, and the above content is for reference
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