FJPF5321TU

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	5A
Voltage - Collector Emitter Breakdown (Max):	500V
Vce Saturation (Max) @ Ib, Ic:	1V @ 600mA, 3A
Current - Collector Cutoff (Max):	100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	15 @ 600mA, 5V
Power - Max:	40W
Frequency - Transition:	14MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F

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Introduction

The FJPF5321TU is a type of single bipolar junction transistor (BJT). It is a semi-conductor device commonly used for various electronic applications. As BJTs are versatile and cost-effective, they are widely used for a variety of applications ranging from RF circuits, amplifiers, and switching circuits, to logic circuits and motor drivers. The FJPF5321TU is a low-power device that is designed for digital and analog applications.

Design and Operation

The FJPF5321TU consists of three sections: the collector, the base, and the emitter. The collector and emitter are separated by a thin layer of semiconductor material that is typically an elemental form of silicon or germanium. In operation, the collector-base junction acts as a closed switch when no current is applied, while the other junction - the base-emitter junction - acts as a variable resistance.The FJPF5321TUs can be operated in either an "active" or "inactive" state. When in the active state, the transistor amplifies the input signal and generates an output signal. When in the inactive state, the transistor does not produce an output and the input signal is simply downscaled.

Applications

The wide range of parameters, operating states, and current limits of the FJPF5321TU make it a popular device for various electronic applications. One of the most commonly used applications for BJTs is amplification. The low-power FJPF5321TU is frequently used in frequency synthesis, audio circuit design, and signal detection and conversion systems.The FJPF5321TU is also used to construct logic devices such as flat logic circuits and analog switches. These devices are used to detect and control signals of various frequency levels and pulse shapes. Some applications require the use of more than one transistor; thus, several FJPF5321TU transistors may be connected to provide additional power and control over the output signal.

Working Principle

The working principle of the FJPF5321TU is based on the fact that the base-emitter junction behaves as a variable-resistance element when current is applied. When a current is connected to the base of the transistor (or bipolar junction), it causes changes in the electric field that cause current to flow from the collector to the emitter. This current flowing from the collector to the emitter causes the voltage at both junctions to change, allowing for amplification of the signal. The amplification process occurs in two stages. The first stage is called the forward-active stage and is initiated when a current is supplied to the base elec-trode. The second stage is known as Beta or common-emitter current gain and is activated when a minimum forward voltage is applied to the base. When a signal is amplified in this way, the base-emitter junction behaves as a current-controlled resistor, allowing current to flow from the collector to the emitter.

Conclusion

In conclusion, the FJPF5321TU is a single-transistor bipolar junction transistor designed for numerous analog and digital applications. It is a popular device used for RF circuits, amplifiers, and logic circuits, as well as motor drivers and other complex applications. The input signal is amplified utilizing the transistor’s two-stage process based on the behavior of the base-emitter junction when current is supplied to the base. There are various parameters, operating states, and current limits of the FJPF5321TU which make it a highly versatile device suitable for a wide range of electronic and electrical applications.

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