FJPF13007H2

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	8A
Voltage - Collector Emitter Breakdown (Max):	400V
Vce Saturation (Max) @ Ib, Ic:	3V @ 2A, 8A
Current - Collector Cutoff (Max):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	26 @ 2A, 5V
Power - Max:	40W
Frequency - Transition:	4MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F
Base Part Number:	FJPF13007

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.Introduction to FJPF13007H2
FJPF13007H2 is a NPN transistor designed for small signal, low noise and medium power applications. It is a single-transistor device that is manufactured in a high-density process, making it ideal for space-constrained designs. It also has a low VCE(SAT) and a high gain, making it suitable for a wide range of amplifier and switching applications.

Application Field
The FJPF13007H2 can be used in a variety of applications, including switching, amplifying, and filtering. It is suitable for high-frequency applications, as well as low-noise precision circuits. In switching applications, the FJPF13007H2 can be used as a low-carry digital switch or as a low-voltage analog switch, allowing signals to be distributed easily and efficiently. It can also be used in amplifying circuits where high stability and accuracy are required, as well as in audio amplifiers, where low noise and distortion are paramount. In filtering applications, the FJPF13007H2 can be used to decrease unwanted noise, maximizing signal fidelity. The FJPF13007H2 is also often used in low-power voltage protection circuits, where it can ensure that sensitive components are not harmed by overvoltage.

Working Principle
In its most basic form, the FJPF13007H2 consists of two junctions of silicon and base or collector-emitter electrodes. It acts as a switch or amplifier when a voltage or current is applied to the base. In amplifying applications, the current on the base injects electrons into the P-type silicon, which are collected by the emitter. This injection of electrons causes a current to flow in the collector, thus creating an output signal. This process amplifies the input signal. In switching applications, the current on the base controls the collector current, thus allowing the FJPF13007H2 to act as a switch. This switching capability can be used to control digital logic or to distribute analog signals with greater accuracy.

Advantages
The FJPF13007H2 offers a number of advantages over other transistors. It has a high gain and a low VCE(SAT), making it suitable for low-noise precision circuits. It is also an ideal device for space-constrained designs. This transistor has a low operating power and a high operating temperature range, making it suitable for a wide range of applications. Furthermore, its high breakdown voltage and surge protection make it ideal for protecting sensitive components in voltage protection circuits. Finally, the FJPF13007H2 is an inexpensive device, making it a cost-effective solution for a variety of switching and amplifying applications.

Conclusion
The FJPF13007H2 is a single-transistor device designed for switching and amplifying circuits. It has a high gain and low VCE(SAT), making it ideal for low-noise precision circuits and space-constrained designs. Additionally, it has a low operating power and wide temperature range, making it suitable for a variety of applications. Moreover, its high breakdown voltage and surge protection make it an ideal device for protecting sensitive components. Finally, its good price makes it a cost-effective solution for switching and amplifying applications.

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