FJPF13009TTU Allicdata Electronics
Allicdata Part #:

FJPF13009TTU-ND

Manufacturer Part#:

FJPF13009TTU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 400V 12A TO-220F
More Detail: Bipolar (BJT) Transistor NPN 400V 12A 4MHz 50W Thr...
DataSheet: FJPF13009TTU datasheetFJPF13009TTU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 12A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Power - Max: 50W
Frequency - Transition: 4MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Base Part Number: FJPF13009
Description

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FJPF13009TTU is a type of single bipolar junction transistor (BJT) with utility in high-frequency applications. It provides good performance at frequencies up to 2 gigahertz and power levels up to 20 watts. It has a range of collector-base voltages from -4V to +4V, and it is capable of high current gains and low saturation voltages. The device is able to operate at temperatures from -55 to +175 degrees Celsius.

A bipolar transistor is a three-terminal device that is used to amplify a signal or control a large current. It is a current-controlled device, meaning that the amount of current flowing through the device depends on the amount of current flowing through the base electrode. Consequently, small changes in the base current will cause much larger changes in the collector current. This makes bipolar transistors well-suited for controlling large currents with small voltage signals.

The FJPF13009TTU is commonly used in switches and amplifiers. As a switch, the FJPF13009TTU can be used to switch large current loads with relatively small currents and voltages. This is done by connecting the base of the transistor to a controlling circuit, causing the device to switch between on and off states. Depending on the configuration, the transistor can be used as an NPN or PNP device.The FJPF13009TTU can also be used as an amplifier. Depending on the circuit configuration and operating parameters, the device can be used as a low-noise voltage amplifier, a high-frequency amplifier, or a high-power amplifier. In most amplifier configurations, the device is used as an NPN transistor, but it can also be used as a PNP device when necessary.The FJPF13009TTU\'s performance is determined by two main parameters: the hFE and the ft. The hFE refers to the current gain, and it indicates how much larger the current through the collector will be in compared to the base current. The ft is the frequency at which the current gain drops to one, and it indicates how high the gain of the device is at higher frequencies.

The FJPF13009TTU is a versatile single bipolar junction transistor with good performance at high power levels and frequencies. It can be used as a switch to control large current loads or as an amplifier for high-power or high-frequency applications. Its hFE and ft parameters allow for a wide range of operating conditions, making it suitable for use in many different applications.

The specific data is subject to PDF, and the above content is for reference

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