Allicdata Part #: | FQA22P10-ND |
Manufacturer Part#: |
FQA22P10 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 100V 24A TO-3P |
More Detail: | P-Channel 100V 24A (Tc) 150W (Tc) Through Hole TO-... |
DataSheet: | FQA22P10 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PN |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1500pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 125 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FQA22P10 Application Field and Working Principle
FQA22P10 is a type of single power metal-oxide-semiconductor field-effect transistor (MOSFET). It has a physically small package, making it an ideal component for higher system density in electronic engineering. It has a wide application field, such as battery management systems and protection circuits of buses, IGBT/MCT drives, portable communication and portable instrumentation. In addition, it can be used in power peripherals like blowers, pumps and motors. It is also suitable for automotive and industrial power control circuits.
Working Principle
The FQA22P10 MOSFET is constructed from two important components. The first component is the dielectric layer gate oxide which is typically a high quality silicon dioxide (SiO2) film. This oxide layer is then layered on a substrate. The gate is placed on the oxide layer and as charge is applied to it, a small electric field is formed. As the gate voltage increases, the area of the oxide layer that lies underneath the gate feels an increasing electric field, resulting in a decrease in the width of the channel. As the channel width decreases, the resistance of the channel increases, limiting the amount of charge current flow through it.
The second component is the drain and source regions or, as they are sometimes called, the drain and source electrodes. This region is created by diffusing dopants such as arsenic, boron and phosphorus, or a combination of both, into the silicon substrate. The dopant creates a region in which carriers (electrons or holes) can move freely in order to carry a current when a voltage is applied. By controlling the source and drain voltage, the FQA22P10 MOSFET can be used to regulate the flow of current in an application.
Features and Benefits
The FQA22P10 MOSFET offers a number of features and benefits over other types of switch devices, making it an attractive choice for power circuitry.
- Low On-Resistance: The low series resistance of the FQA22P10 MOSFET enables it to have an exceptionally low on resistance when compared to other switch types. This reduced resistance lowers power consumption and increases efficiency.
- High Gain: The gate current of the FQA22P10 MOSFET is small relative to other switch types, which can enhance the response speed of circuits.
- High Sensitivity: The high sensitivity of the FQA22P10 MOSFET enables it to quickly detect changes in the output current, power or voltage and control the current flow accordingly.
- High Speed: The FQA22P10 MOSFET features high-speed switching capabilities, making it ideal for applications that require the fast switching of devices.
Conclusion
The FQA22P10 MOSFET is a highly versatile switch device that can be used in a wide range of applications, from automotive and industrial circuits to battery management systems and protection circuits of buses. Its low on-resistance, high gain, high sensitivity, and high speed make the FQA22P10 MOSFET an attractive choice for power circuitry.
The specific data is subject to PDF, and the above content is for reference
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