FQA24N60

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Field-effect transistors are a type of transistor wherein an electric field is created in a semiconductor layer in order to control the number of electrons present within the device. The FQA24N60 is a N-channel metal-oxide-semiconductor field-effect transistor (MOSFET) specifically designed for high speed switching applications, but can also be found in analog switching, low side switching, and temperature sensing applications. It is widely used due to its low on-state resistance and its low threshold voltage, as well as its industry standard footprint.

Working Principle

A MOSFET works by using a reverse-biased gate-to-source junction. This junction can be thought of as essentially a diode. When a voltage is applied to the gate, it repels the majority carriers away from the source inside the channel region. This reduction of current through the channel, decreases the resistance of the channel and increases the current from source to drain. This principle is termed “Enhancement Mode.”

The FQA24N60 is specifically designed for high speed switching applications due to its high and low side switching capability. It has a low on-state resistance of 24Ω, a low gate charge of 3.2nC, and can handle up to 20A of drain current. It also has a low threshold voltage of 1.8V, which means that the device will turn on with a relatively small gate voltage. This makes the FQA24N60 an ideal device to be used in a low power, high speed switching application.

Advantages of FQA24N60

The FQA24N60 offers several benefits that are not found in other MOSFETs, including:

• Low on-state resistance, which enables the device to handle large amounts of current.
• Low threshold voltage of 1.8V, allowing devices to be switched on with relatively low gate voltages.
• Low gate charge of 3.2nC, which helps to reduce switching times, making this an ideal device for high-speed switching applications.
• Industry standard footprint, making it compatible with a wide variety of circuit boards and systems.
• High-side and low-side switching capability, making it easy to switch multiple devices off and on simultaneously.

Applications

The FQA24N60 is widely used due to its low on-state resistance, low gate charge and low threshold voltage. It can be found in a variety of applications including:

• Switch mode power supplies.
• Battery-powered systems.
• Automotive applications.
• Analog switching.
• Low side switching.
• Temperature sensing.

Conclusion

The FQA24N60 is a low on-state resistance, low gate charge, and low threshold voltage n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) designed for high-speed switching applications. It can be found in switch mode power supplies, Battery-powered systems, automotive applications, analog switching, low side switching, and temperature sensing applications.

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