Allicdata Part #: | FQA24N50_F109-ND |
Manufacturer Part#: |
FQA24N50_F109 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 24A TO-3PN |
More Detail: | N-Channel 500V 24A (Tc) 290W (Tc) Through Hole TO-... |
DataSheet: | FQA24N50_F109 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | FRFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 4500pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 290W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-3PN |
Package / Case: | TO-3P-3, SC-65-3 |
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The FQA24N50_F109 is a common-source MOSFET put out by Fairchild Semiconductor International, Inc. It is commonly used in the design of power amplifiers and audio systems.
The FQA24N50_F109 is categorized as a N-Channel Enhancement Mode MOSFET, which is a type of Field-Effect Transistor (FET). FETs are voltage-controlled, nonlinear semiconductor devices that can significantly amplify weak signals and display low-level impedance.
FQA24N50_F109 devices are high-performance transistors specifically designed for use in power management systems. This MOSFET provides excellent switching performance with a drain-source breakdown voltage of 500V and a maximum current of 24A. This device offers low on-state resistance, low gate charge, and low total gate charge. Other features include a maximum power dissipation of 44W, a highly reliable package with a maximum junction temperature of 250 degrees Celsius, and a power MOSFET with a maximum frequency of 3MHz.
The main application of the FQA24N50_F109 is in audio systems and power amplifiers. This MOSFET can be used to amplify weak signals and provide high currents to indicate input signals. It can also provide excellent signal-to-noise characteristics in power amplifier designs. This reliable package can help minimize losses due to its low on-state resistance and fast switching speeds. The low gate charge feature helps to minimize power consumption and its tight tolerance ensures a consistent signal quality.
The working principle of a MOSFET is based on the application of electric field. This type of field-effect transistor uses a gate voltage to control the electric current flowing through the device. When a positive bias voltage is applied to the gate, a channel is created between the drain and source, allowing the electric current to flow. Conversely, when a negative bias voltage is applied, the channel is interrupted, thus reducing or stopping the current from flowing.
The FQA24N50_F109 offers improved switching performance and enhanced reliability due to its low on-state resistance, low gate charge, and low total gate charge features. Its highly reliable package provides superior thermal performance and can be used in audio systems and power amplifiers. Its wide range of features, such as its tight tolerance and fast switching speeds, make it a great choice for audio and power management applications.
The specific data is subject to PDF, and the above content is for reference
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