FQA28N50

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An FQA28N50 is a Field Effect Transistor (FET) that is classified as a single-MOSFET. It is a silicon N-channel enhancement-mode power MOSFET designed for high speed switching applications. The operating drain current of this transistor ranges from 28 A to 50 A, and the drain source voltage ranges from 50 to 500 V. It is suitable for applications such as high speed switching, and Class D audio amplifiers. The FQA28N50 has a high-voltage rating and low on-state resistance, making it useful for many applications. This article provides a detailed overview of the FQA28N50, its application field and working principle.

Overview of FQA28N50

The FQA28N50 is a silicon N-channel enhancement-mode power MOSFET. It has a drain current range of 28 to 50 A, drain source voltage range of 50 to 500 V, and a peak gate voltage range of ± 20 V. The maximum junction temperature is 175 degrees Celsius and the continuous drain current is 40 A at 73 degrees Celsius and 50 A at 25 degrees Celsius. It also has a high-voltage rating and low on-state resistance. The FQA28N50 is in a TO-220 package.

Application Field

The FQA28N50 is suitable for high-speed switching applications. It can be used in a variety of applications such as motor control, inverters, DC to DC converters, Class D audio amplifiers, and voltage regulators. It has a high-voltage rating and low on-state resistance, so it is suitable for high-voltage applications. It also has a low input threshold voltage, making it suitable for low-voltage applications. The FQA28N50 is also used in switch-mode power supplies and other high-speed switching applications.

Working Principle

The FQA28N50 is a field effect transistor (FET). It is a voltage-controlled device that allows current to flow through the channel between the drain and the source when a voltage is applied to the gate. The drain-source current is controlled by the amount of voltage applied to the gate. The higher the voltage applied to the gate, the higher the drain-source current. This relationship is described by the drain to source current-voltage (I-V) characteristic of the FET. When the drain-source current reaches a certain level, the power MOSFET is said to be in saturation. The FQA28N50 is an enhancement-mode FET, meaning that the device turns on when the gate voltage is greater than the threshold voltage.

Conclusion

The FQA28N50 is a silicon N-channel enhancement-mode power MOSFET designed for high-speed switching applications. It has a high-voltage rating and low on-state resistance, making it suitable for many applications such as motor control, inverters, DC to DC converters, Class D audio amplifiers, and voltage regulators. The drain-source current of the transistor is controlled by the voltage applied to the gate, which is described by the I-V characteristic of the FET. The FQA28N50 is an enhancement-mode FET, meaning that it turns on when the gate voltage is greater than the threshold voltage.

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