FQA28N50_F109

Series:	QFET®
Packaging:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	500V
Current - Continuous Drain (Id) @ 25°C:	28.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	160 mOhm @ 14.2A, 10V
Vgs(th) (Max) @ Id:	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	140nC @ 10V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	5600pF @ 25V
FET Feature:	--
Power Dissipation (Max):	310W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-3PN
Package / Case:	TO-3P-3, SC-65-3

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Introduction

The FQA28N50_F109 is a single N-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). It is designed for high-power applications and provides excellent switching characteristics, high DC (Direct Current) and AC (Alternating Current) current handling capability. This device also has a low on-resistance, making it suitable for applications that need fast switching.

Applications

The FQA28N50_F109 is a common choice for use in automobile electrical systems, due to its ability to handle high currents. It is also suitable for use in industrial power systems and domestic appliances. Furthermore, it can be used as a switching element in pulse-width modulation (PWM) circuits.

Working Principle

The FQA28N50_F109 is an enhancement mode MOSFET, which means that the device behaves as a switch when the gate voltage exceeds the threshold voltage (V_th). When the gate voltage is greater than the threshold voltage, the channel between the source and the drain is opened, allowing current to flow from the source to the drain. When the gate voltage is less than the threshold voltage, the channel is closed, preventing the flow of current. This transistor also has an integrated body diode, which is commonly used for protection against reverse voltage applications. This diode will conduct current when the drain is more positive than the source, and the MOSFET is off. This prevents the reverse voltage from getting applied to the transistor, which would otherwise cause it to conduct current in the reverse direction, leading to damage.

Conclusion

The FQA28N50_F109 is a single N-channel enhancement mode MOSFET that is well suited for high-power applications. It offers excellent switching characteristics, high current handling capability, and a low on-resistance. It can be used in automobile electrical systems, industrial power systems, domestic appliances, and pulse-width modulation circuits. The FQA28N50_F109 works on the principle of a switch opening and closing a channel between the source and the drain when a gate voltage is applied to the device. The integrated body diode also helps to protect the device against reverse voltage applications.

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