FQA28N50F

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FQA28N50F is a fast MOSFET designed for high-reliability applications and is part of the FQAA_PY series of devices. This series of devices is the result of the company\'s commitment to provide reliable and robust products, both in terms of speed performance and temperature range.

FQA28N50F is a cool MOSFET that offers superior performance in high and low voltage applications as compared to other similar fast MOSFETs. The device utilizes a double diffused vertical N-channel structure, which provides low on-resistance and superior switching performance, while being able to withstand higher temperature environments.

FQA28N50F is a fast MOSFET designed for applications that require high speed and low power consumption, such as in high-speed switching and high power switching. A variety of packages are available to suit the application, including QFN packages which are ideal for high power and high speed applications.

FQA28N50F works on the principle of voltage induced current modulation. This means that when a voltage is applied across the gate and drain terminals of the device it results in a current flow through the device as a result of the field effect created. The current created is proportional to the voltage applied and its magnitude is determined by the device\'s size and structure. This current is referred to as the drain current and is used to control the output voltage of the device.

The amount of current flowing through the device is resisted by the source and drain structures, which act as resistors. The source and drain structures also act as gate capacitors, which are responsible for controlling the amount of current flowing through the device. The larger the gate capacitance, the more current will flow through the device.

FQA28N50F offers a wide range of operating temperatures, ranging from -55°C to +175°C. It also features a very high breakdown voltage of 500 volts and a maximum operating current of 28 amps. Since the device has low RDS(ON), the overall efficiency of the system using the device will be high, resulting in better power utilization.

In conclusion, FQA28N50F is a fast MOSFET device designed for high reliability and performance and is suitable for a wide range of applications, such as high-speed switching, high power switching, and power inverters. It is part of the FQAA_PY series and offers superior performance in high and low voltage applications. The device utilizes a double diffused vertical N-channel structure, which provides low on-resistance and superior switching performance and it also features a maximum operating current of 28 amps.

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