Allicdata Part #: | FQA28N15_F109-ND |
Manufacturer Part#: |
FQA28N15_F109 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 33A TO-3P |
More Detail: | N-Channel 150V 33A (Tc) 227W (Tc) Through Hole TO-... |
DataSheet: | FQA28N15_F109 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | QFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 150V |
Current - Continuous Drain (Id) @ 25°C: | 33A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 16.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 227W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-3PN |
Package / Case: | TO-3P-3, SC-65-3 |
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The FQA28N15_F109 is a type of metal–oxide–semiconductor field-effect transistor (MOSFET). MOSFETs are three-terminal devices with an extremely high input impedance, making them the most widely used electronic device for the amplification and switching of electronic signals. Among the many types of MOSFETs, the FQA28N15_F109 features low gate charge, low gate circuit capacitance, and low source-drain capacitance. This makes it a great choice for high speed, low power applications.
The most basic application of the FQA28N15_F109 is as a switch. This transistor can be used in circuits to switch electrical signals on and off. This makes it particularly useful in switching between different electronic components in a circuit or for controlling the flow of electricity in a circuit. The FQA28N15_F109 is also often used for voltage regulation and voltage switching in various types of power supplies.
The FQA28N15_F109 is also commonly used for amplifying and controlling AC signals. This is especially useful for audio applications and for controlling the voltage level of AC signals. In addition, the FQA28N15_F109 can be used in a variety of power circuits for applications such as speed control and current limiting.
The FQA28N15_F109 is composed of two compositional elements: the drain and the gate. The two terminals are connected through a semiconductor channel. A voltage is applied to the gate, which generates an electric field that affects the conductivity of the channel. This in turn allows electric current to pass through the channel when the applied voltage is high enough.
The voltage that is applied to the gate of the FQA28N15_F109 must be greater than the threshold voltage. This ensures that the semiconductor channel is operating at the desired conductivity level. When the voltage is lowered, the transistor switches off and the electric current can no longer pass through the channel. This switching operation is used to control the signal that is being delivered to a particular electronic circuit.
The FQA28N15_F109 is a very versatile and reliable MOSFET. It is well-suited for applications such as signal amplification, voltage regulation, and current limiting. This makes it a popular choice for many electronic circuits that require reliable switching and amplification performance.
The specific data is subject to PDF, and the above content is for reference
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