FQA28N15

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Field Effect Transistors (FETs) are three terminal semiconductor devices that are widely used for switching and amplifying electronic signals. The FQA28N15 is a high voltage N-Channel MOSFET designed specifically for use in controlling power in industrial high power applications. It is a special type of FET that has a gate-controlled channel between the source and the drain for enabling current flow in only one direction, making it ideal for use in audio amplifiers, motor drives and power supplies.

The FQA28N15 has an on-resistance value of 28 milliohms and can handle up to 30 amps and 60 volts. Its RDS(on) parameter is defined as the on-state resistance of the device measured at twenty-five degrees Celsius and is mainly used for components that are operated between two hundred and fifty volts to five hundred volts. This makes the FQA28N15 the perfect choice for switching applications such as those found in Class-D amplifiers and high efficiency automotive power supplies.

Unlike a bipolar junction transistor, a FET does not require a constant gate current and stays in the on-state as long as the gate-to-source voltage is greater than a certain threshold voltage that is known as the threshold voltage (VGS(th)). Moreover, the current that passes between the source and drain electrodes is proportional to the applied gate-to-source voltage, known as the ‘transconductance’ of the FET. The FQA28N15 has a voltage gain of up to seventy (70) and a transconductance of up to 0.6 milliamperes.

The FQA28N15 is highly reliable and efficient and can control currents up to 30 amps. It has an operating temperature range of -55 degrees Celsius to 175 degrees Celsius and is also available in a range of SMD packages, including the SO-8 and DPAK, which offer a higher degree of flexibility in design parameters. In addition, the FQA28N15 also features low gate-source capacitance, making it ideal for applications involving high-speed switching. The FET also has an avalanche energy specification of up to twenty-five (25) millijoules, which ensures the safety of the device in high-voltage applications.

The FQA28N15 is also suitable for use in professional audio applications, such as pro-audio amplifiers, due to its low noise levels and low distortion specifications. This makes it ideal for use in high-end professional equipment, such as studio mixing desks and amplifiers, where audio clarity is of utmost importance. Furthermore, the FQA28N15’s high transconductance and gate-source capacitance allow it to drive high-power audio signals with low distortion, making it suitable for use in high-power amplifiers and sound reinforcement systems.

In conclusion, the FQA28N15 is a reliable and efficient high-voltage N-Channel MOSFET designed for use in high-power applications. It is capable of controlling currents up to thirty (30) amps and features low gate-source capacitance and low noise levels, making it suitable for use in audio and power applications. The FQA28N15 is available in a range of SMD packages and features a voltage gain of up to seventy (70) and an avalanche energy specification of up to twenty-five (25) millijoules. This makes the FQA28N15 the perfect choice for controlling power in industrial high-power applications.

The specific data is subject to PDF, and the above content is for reference