Allicdata Part #: | FQA24N50F-ND |
Manufacturer Part#: |
FQA24N50F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 24A TO-3P |
More Detail: | N-Channel 500V 24A (Tc) 290W (Tc) Through Hole TO-... |
DataSheet: | FQA24N50F Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PN |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 290W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4500pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
Series: | FRFET® |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQA24N50F is a field-effect transistor (FET) which belongs to the n-channel metal-oxide semiconductor family (MOSFETs). This type of FET is known as a single-gate FET due to the fact that it contains only one gate electrode. This FET is primarily used to switch or amplify signals in various applications, due to its ability to control current flow with a small input voltage applied to its gate. In this article, we will discuss the application fields and working principle of the FQA24N50F.
The FQA24N50F is suitable for high-frequency switching applications such as wireless telecommunications and general-purpose switching. This type of FET is also capable of operating at high temperatures and is able to withstand high amounts of electrical noise due to its high dielectric strength. Additionally, the FQA24N50F offers low on-resistance, which allows for high-efficiency switching in minimal power loss and low power consumption.
As for its working principle, when voltage is applied to the gate of the FQA24N50F, a thin layer of oxide, also known as the “gate oxide” forms along the gate-drain and gate-source junctions. This highly electrically resistive layer acts as a potential barrier and prevents the flow of electrons through the device. The amount of current that can pass through the device is then determined by the voltage applied to the gate. In other words, the higher the voltage applied to the gate, the higher the current that can be allowed to flow. When the gate voltage is equal to or less than the threshold voltage, the device is considered to be in the off-state and no current can flow. Put simply, the FQA24N50F is able to control current flow through the gate electrode, which enables easy and efficient switching.
In summary, the FQA24N50F is a n-channel MOSFET which is suitable for high-frequency switching applications. It offers low on-resistance and is able to withstand high operating temperatures and a wide range of electrical and noise interference. As for its working principle, it is able to control current flow by varying the voltage applied to the gate. This makes the FQA24N50F an ideal choice for anyone looking for a reliable and efficient switching solution.
The specific data is subject to PDF, and the above content is for reference
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