FQA27N25

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The FQA27N25 is a discrete drain-source-controlled field effect transistor (FET), specifically classified as a single enhancement mode MOSFET, which can be used in a wide range of application fields. This article will describe the working and application of the FQA27N25 FET and its advantages over other transistors.

FQA27N25 Features

The FQA27N25 comes in a surface mount package and has the following features:

• Gate threshold voltage of 3.2 to 4.5V
• Drain-source release voltage, V(GS) of 18V
• Drain current I_D of 25A
• Drain-source breakdown voltage BV_DSS of 25V
• R_DS(on) of 0.033Ω

Working Principle

FETs operate on the principle of surface conduction between the source and drain, with the gate controlling the flow and the voltage across the channel. In the FQA27N25, the gate threshold voltage is 3.2V – 4.5V. When this voltage is applied to the gate, it causes a depletion of the carrier concentration in the channel region, varying the resistance of the channel. This change in resistance, combined with the current flowing through the source and drain, controls the drain-source voltage. With increased gate voltage, gate current increases until the maximum drain current of 25A is reached.

In the FQA27N25, the drain-source break-down voltage is 25V, meaning this is the maximum voltage across the channel before it reaches the breakdown voltage. The FQA27N25 also has an excellent power-handling capability and low gate-charge characteristics. The FQA27N25 also has a fast switching speed between the drain-source and gate-source.

Application Fields of the FQA27N25

The high switching speeds, low gate charge, and low on-resistance of the FQA27N25 make it suitable for a wide range of applications, such as in switching power converters and communication circuits. In power converters, it can be used in place of a bipolar transistor or an insulated gate bipolar transistor (IGBT) for switching at higher frequencies, as it has a lower on-resistance, making it more efficient. It can also be used in applications where low voltage and low gate charge are advantages, such as in relay and lamp control circuits.

The FQA27N25 can also be used in audio amplifiers, switching power supplies and medical equipment. It is also suitable for automotive applications, where its low on-resistance and high breakdown voltage make it an ideal choice for use with switching controllers and motor drives.

Advantages over Other FETs

The FQA27N25 has several advantages over other FETs, such as:

• It has a low on-resistance, making it ideal for applications in which current carrying capacity must be maximized
• It has a high breakdown voltage of 25V, making it suitable for use in higher voltage applications
• It has a fast switching speed between the drain-source and gate-source, making it ideal for use in AC applications
• It has a low gate charge characteristic, making it suitable for use in low power applications
• It is available in a variety of packages, making it ideal for use in surface mount applications.

In summary, the FQA27N25 is a single enhancement mode MOSFET which offers a wide range of features and advantages. It is suitable for a range of applications, including audio amplifiers, switching power converters, power supplies, medical equipment, and automotive control systems. Its low on-resistance and high breakdown voltage make it a versatile transistor for use in a variety of circuits.

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