FQA70N10 Allicdata Electronics
Allicdata Part #:

FQA70N10-ND

Manufacturer Part#:

FQA70N10

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 70A TO-3P
More Detail: N-Channel 100V 70A (Tc) 214W (Tc) Through Hole TO-...
DataSheet: FQA70N10 datasheetFQA70N10 Datasheet/PDF
Quantity: 50
Stock 50Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3PN
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 214W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 23 mOhm @ 35A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The FQA70N10 is an advanced N-Channel field effect transistor (FET) from Fairchild Semiconductors. It is designed to provide high-performance switching and excellent energy efficiency while consuming very little power, making it an ideal choice for a wide range of applications.

The FQA70N10 device is designed based on the advanced technology of “ Gallium Nitride FieldPlates”. This technology results in an exponentially increased energy efficiency while reducing power consumption. Furthermore, the FQA70N10 also features an improved power rating and low On-Resistance. This combination makes the FQA70N10 perfect for high-power, high-speed switching applications.

The FQA70N10 is suitable for both high-power motor applications such as HVAC, motor drives, and DC-DC converters and also for low-power applications such as mobile devices, computers, and point-of-sale terminals. Its low power consumption makes it ideal for portable and battery-powered devices.

The FQA70N10 is a single N-channel FET. It uses a voltage-driven gate to control the current flow between the source and drain. The gate must be given a voltage higher than the threshold voltage for the FET to turn on. Conversely, if the voltage on the gate is less than the threshold voltage then the FET will turn off.

To control the current flow between the source and drain, the gate voltage must be changed dynamically. This can be achieved using pulse width modulation (PWM), which produces a square wave with varying on and off times. By varying the on and off times, the average current flow can be controlled. The FQA70N10 can also be used as a linear regulator, where a more constant current flow is desired.

Another beneficial feature of the FQA70N10 is its integrated protection circuit. This protection circuit monitors the voltage level on the gate and will shut-off the device if the voltage drops below the lower threshold voltage. This helps protect against short-circuits or over-current conditions.

The FQA70N10 is a versatile device that has many applications. With its low On-Resistance, high-performance switching and excellent energy efficiency, it is an ideal choice for a variety of applications. Whether you need it for high-power motor control or for low-power portable devices, the FQA70N10 is an excellent choice.

The specific data is subject to PDF, and the above content is for reference

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