Allicdata Part #: | FQA7N80_F109-ND |
Manufacturer Part#: |
FQA7N80_F109 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 800V 7.2A TO-3P |
More Detail: | N-Channel 800V 7.2A (Tc) 198W (Tc) Through Hole TO... |
DataSheet: | FQA7N80_F109 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | QFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800V |
Current - Continuous Drain (Id) @ 25°C: | 7.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 3.6A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1850pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 198W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-3PN |
Package / Case: | TO-3P-3, SC-65-3 |
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FQA7N80_F109 is a type of N-channel MOSFET, which is frequently applied in integrated circuits. The high transconductance of the device, its low drain-source on-resistance, and the low gate charge make it the perfect choice for many applications, including for DC/DC switching, motor control, high-current sense and motor control.
The basic principle of the FQA7N80_F109 is its method of controlling current flow. A MOSFET is an insulated gate FET device, which stands for Metal-Oxide-Semiconductor Field-Effect Transistor. This device uses an energized gate terminal to control the current flow between the source and drain terminals, the current flow being modulated by the voltage applied to the gate terminal. The insulated gate is used to create a depletion region in the channel, which then controls the flow of electrons or holes through the channel.
The FQA7N80_F109 has a key advantage over Bipolar Junction Transistors (BJTs) in terms of efficiency and speed, due to its low voltage turn-on. Since this device is a voltage-controlled device, it can be turned on over a wider voltage range than a BJT, which enables it to switch faster. The device also features a low on-resistance and high Gate-source capacitance to help reduce switching operations and heat dissipation. Its high transconductance also allows for greater levels of current to be switched.
The FQA7N80_F109 is most commonly used in power management applications requiring high efficiency, low switching losses, and faster switching times. It is widely used in DC/DC converters, power supply circuits, motor drives, and other high-current switching applications. The device is often used in high-end motor control operations, as it is faster, more efficient, and more reliable than BJTs. It is also commonly used in automotive and industrial applications, as it provides better power, reliability, and efficiency.
In summary, FQA7N80_F109 is a N-channel MOSFET device that is frequently used in integrated circuits and power management applications. It can be used in DC/DC switching, motor control, high-current sense, and more. It features low voltage turn-on operation, low on-resistance, high Gate-source capacitance, and high transconductance, enabling it to switch faster and dissipate less power. Due to its many advantages, the device is often applied in high-end applications.
The specific data is subject to PDF, and the above content is for reference
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