FQA7N90_F109

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FQA7N90_F109 is a Field-Effect Transistor (FET) that is mainly used in high-voltage switching applications. It is a single N-channel enhancement-mode transistor that offers a wide range of electrical characteristics making it suitable for a variety of applications. This transistor is fabricated using advanced insulated-gate bipolar transistor (IGBT) technology and can provide high voltage and current capability with low on-state resistance.

FQA7N90_F109 is gate-controlled JFET with a drain-gate-source connection. Unlike a typical BJT, with the application of the proper voltage to the gate and drawing current through the drain-source, the FET can either be turned on or off. It is mainly designed to switch off power transmission because of its fast switching and high repetitive voltage isolation. This transistor can also be used in analog applications such as amplification, rectification, and waveform generation.

The application fields for the FQA7N90_F109 are mainly found in digital and analog electronic circuits in various industrial and commercial fields. For example, it can be used in telecommunications and industrial equipment, as well as medical devices, home entertainment systems, power supplies, and automotive and military applications. This transistor is also an ideal component for high-voltage, low-voltage and high frequency applications.

The working principle of FQA7N90_F109 transistor is based on electron movement from the source to the drain. When the voltage at the gate is maintained at the required level, a channel is formed between the source and the drain. This allows electrons to pass from the source to the drain, resulting in current flow. The amount of current flow is depending on the applied gate voltage and also the resistance between source and drain.

For the FQA7N90_F109, the gate voltage needs to be applied in the opposite polarity to the threshold voltage (VGS, th) for it to be in an enhancement mode of operation. With the correct applied gate voltage, the resistance between the source and the drain is reduced and thus, current flows across the channel. In this state, the FET is said to be conducting and it is transferring power from the source to drain.

When the value of gate voltage is reduced, the resistance between the source and the drain increases and the transistor blocks current at a certain voltage level. This is called cutoff (or non-conducting) state since the transistor becomes \'open\' preventing any power transfer. Thus, the FQA7N90_F109 can be used for bidirectional switching applications.

In summary, FQA7N90_F109 is an N-channel enhancement-mode Field-Effect Transistor (FET) suited for high-voltage switching applications. It offers excellent electrical characteristics and its working principle is based on electron movement from the source to the drain when the gate voltage is applied over the threshold voltage. This transistor can be used in various industrial and commercial fields for digital and analog electronic applications, and its bidirectional switching capability is one of the key features of this FET.

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