Allicdata Part #: | FQA7N90M-ND |
Manufacturer Part#: |
FQA7N90M |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 900V 7A TO-3P |
More Detail: | N-Channel 900V 7A (Tc) 210W (Tc) Through Hole TO-3... |
DataSheet: | FQA7N90M Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 210W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1880pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.8 Ohm @ 3.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FQA7N90M is an N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with a drain-source breakdown voltage of 90V, a drain-to-gate breakdown voltage of 75V, a maximum drain current of 28A, and a maximum drain-source voltage of 60V. As such, it is well suited for applications involving high power/high speed switching such as motor control, DC/DC converters, and switching power supplies.
The working principle of FQA7N90M follows the basic concept of any FET. A FET is an active transistor that uses an electric field to control the flow of current between the source and the drain. A voltage source is applied to the gate, which creates an electric field at the gate-source junction that lowers or curves the barrier potential. This allows charge carriers (electrons, holes) to flow between the source and drain when a positive voltage is applied to the drain.
The amount of current that flows between the source and drain is determined by the gate-source voltage and the gate-drain voltage. A higher gate-source voltage creates a larger electric field, which increases the number of charge carriers that flow between the source and drain. Similarly, a higher gate-drain voltage results in more charge carriers flowing between the source and drain when a positive voltage is applied to the drain.
FQA7N90M is especially well suited for applications involving high power/high speed switching. This is due to a number of factors, including its drain-source breakdown voltage, which allows the MOSFET to operate in higher breakdown voltage applications, its maximum drain current, which allows the device to switch large amounts of current at high speeds, and its maximum drain-source voltage, which allows it to handle high voltages without damaging the device.
Due to its good power and switching speed characteristics, FQA7N90M is suitable for a wide range of applications, such as motor control, DC/DC converters, switching power supplies, home appliances, and any other application involving high power/high speed switching. This makes FQA7N90M an ideal choice for high-power applications.
The specific data is subject to PDF, and the above content is for reference
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