Allicdata Part #: | FQA7N80-ND |
Manufacturer Part#: |
FQA7N80 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 800V 7.2A TO-3P |
More Detail: | N-Channel 800V 7.2A (Tc) 198W (Tc) Through Hole TO... |
DataSheet: | FQA7N80 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 198W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1850pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 3.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.2A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQA7N80 is a power MOSFET transistor designed for use in low-power applications. It has an extremely low on-state resistance, making it ideal for applications where high switching performance and minimal power consumption are essential. It can be used in a wide range of applications, such as power conversion, motor control, switching mode power supplies, and more.
Features and Benefits of FQA7N80
- High drain current rating – up to 9 A in continuous mode
- Low on-state resistance – less than 0.0035 ohm
- Low gate charge – 9 nC
- Low capacitance – 24 pF
- Low voltage drop-off – 0.5 V at drain-source with 100 mA of current
- Superior performance in high frequency switching applications
Application Fields of FQA7N80
The FQA7N80 is ideal for a variety of power applications, such as DC-DC converters, switch-mode power supplies, motor control, wireless power transfer, and load switching. Its low on-state resistance, low capacitance, and low gate charge make it well suited for high frequency switching applications. It can also be used in high voltage applications since it has a drain-source breakdown voltage of 700 V.
Working Principle of FQA7N80
The FQA7N80 is an enhancement-mode vertical N-channel MOSFET. It consists of a Gate, Drain, and Source terminal. When the Gate terminal is not connected to any form of input, the transistor is in its off-state. No current is flowing through the Drain and Source terminals. When the Gate terminal receives a positive voltage, electrons accumulate near the Gate-Source junction and create a low-resistance channel. This low-resistance channel allows electrons to flow from the source to drain, turning the transistor on. The size of the resistance channel between the Drain and Source terminals is regulated by controlling the voltage on the Gate terminal.
Summary
The FQA7N80 is an N-channel vertical MOSFET ideal for low-power, high frequency applications. It has a low on-state resistance of 0.0035 ohm, low gate charge of 9 nC, and low capacitance of 24 pF, making it suitable for high frequency switching applications. It can be used in a wide range of applications, such as DC-DC converters, motor control circuits, power converters, and switch-mode power supplies. It works by controlling the size of the resistance channel between the Drain and Source terminals by controlling the voltage on the Gate terminal.
The specific data is subject to PDF, and the above content is for reference
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