Allicdata Part #: | FQA7N90-ND |
Manufacturer Part#: |
FQA7N90 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 900V 7.4A TO-3P |
More Detail: | N-Channel 900V 7.4A (Tc) 198W (Tc) Through Hole TO... |
DataSheet: | FQA7N90 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 198W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2280pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 59nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.55 Ohm @ 3.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.4A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FQA7N90 are depletion-mode field effect transistors (FETs) with a single-ended gate. At first glance, it might look like just another ordinary transistor, but if one looks a bit closer, there is much more to the FQA7N90 than meets the eye. This article will provide an overview on the application fields of FQA7N90 transistors and their working principle.
The FQA7N90 transistor is a specialized type of field-effect device designed to help increase the efficiency of switching and amplifying applications. It has a very high transconductance, making it ideal for high-current switching applications. The FQA7N90 can also be used to boost the efficiency of voltage amplifiers and RF power amplifiers. It is also well-suited for power management applications such as motor control and DC-DC conversion.
The FQA7N90 also offers superior speed performance. It can operate at frequencies up to 1GHz, making it ideal for high-speed switching applications.Its also provides high-precision level shifting, making it useful in data conversion applications. Other applications include current sensing, signal buffering, and RF switching.
The working principle of the FQA7N90 is based on field-effect transistor (FET) technology. A FET is an unipolar device, meaning the flow of current through it is between a single source and a single drain. This is accomplished by controlling the amount of current that flows between the source and drain through a gate. As the gate voltage is changed, the characteristics of the FET change allowing the current through it to be controlled.
The FQA7N90 utilizes depletion-mode transistors meaning that the transistor is in the "ON" state when the gate voltage is below a certain threshold. As the gate voltage increases, the current flowing through the device decreases until it reaches a certain point where the current is zero. This is also known as pinchoff. As the gate voltage increases further, the current begins to flow again, but at a much lower rate than before. This allows the FQA7N90 to be used as an efficient switching device because current can be controlled at very small increments.
In addition to its use as a switching device, the FQA7N90 can also be used as an amplifier. It has a very high transconductance and since current is controlled at very small increments, the FQA7N90 can be used to amplify signals with great precision. The FQA7N90 can also be used for current sensing and for buffering signals. It can also be used to boost the efficiency of voltage amplifiers and RF power amplifiers.
The FQA7N90 transistor is a versatile device with many applications, from power management to RF switching. Its efficiency, speed and precision make it an ideal choice for a variety of applications. With its depletion-mode design and high transconductance, the FQA7N90 is well-suited to any application where high-performance, high-precision switching and amplification are required.
The specific data is subject to PDF, and the above content is for reference
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