Allicdata Part #: | FQA7N90M_F109-ND |
Manufacturer Part#: |
FQA7N90M_F109 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 900V 7A TO-3P |
More Detail: | N-Channel 900V 7A (Tc) 210W (Tc) Through Hole TO-3... |
DataSheet: | FQA7N90M_F109 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1880pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 210W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-3PN |
Package / Case: | TO-3P-3, SC-65-3 |
Series: | QFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 900V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.8 Ohm @ 3.5A, 10V |
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The FQA7N90M_F109 is a kind of single MOSFET (Metal Oxide Semiconductor Field Effect Transistor) used in power electronics. It is a type of transistor that uses the gate electrodes and signal to control the voltage and current on the drain and source of the device. The FQA7N90M_F109 is a vertical diffusion MOSFET with an integrated charge pump. It is designed primarily for switching power conversion in the industrial, telecom and computing markets.
The FQA7N90M_F109 is a power MOSFET with high voltage drain-source breakdown voltage, low on-state resistance, low input capacitance, and fast switching times. It is suitable for applications such as high-efficiency switched-mode power supplies, motor drives, and synchronous rectifiers. The FQA7N90M_F109 is designed for use with a gate-drive circuit that utilizes the charge pump circuitry integrated into the device.
The basic principle of a MOSFET is that the current flowing between the drain and source electrodes is controlled by varying the voltage on the gate electrode. When a voltage is applied to the gate, the voltage at the drain-source junction increases, allowing current to flow through the device. When the voltage is reduced or removed, the current stops flowing.
The FQA7N90M_F109 features low RDS(ON) (drain-source-on resistance), which is the resistance of the device when a gate voltage is applied. This makes it ideal for high-current applications, as it allows for more efficient transfer of power from the supply to the load. The FQA7N90M_F109 also features a low input-capacitance, which is beneficial for high-frequency switching applications because it reduces the amount of power loss caused by switching.
The FQA7N90M_F109 is commonly used in applications such as power factor corrected supplies, SMPS, and motor drives. The device is also suitable for use in automotive applications, in auxiliary or main power applications, and in general purpose switching applications like in dimmer switches. It can also be used in DC-AC inverters and other power transfer circuits.
The FQA7N90M_F109 is an ideal switch for applications that require a low on-state voltage drop, good switching performance, low gate-charge, and high current capabilities. The combination of these features makes it an excellent choice for applications such as high-efficiency, high-speed power converters, motor drives, and synchronous rectifiers.
The specific data is subject to PDF, and the above content is for reference
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