Allicdata Part #: | FQA70N15-ND |
Manufacturer Part#: |
FQA70N15 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 70A TO-3P |
More Detail: | N-Channel 150V 70A (Tc) 330W (Tc) Through Hole TO-... |
DataSheet: | FQA70N15 Datasheet/PDF |
Quantity: | 212 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PN |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 330W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5400pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 175nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 28 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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FQA70N15 Application Field and Working Principle
The FQA70N15 from Fairchild Semiconductor is a N-Channel enhancement mode MOSFET, which is a semiconductor device that can be used to control the flow of current through a circuit. The particular FQA70N15 has a drain-source breakdown voltage of 70V and a continuous drain current (ID) of 30A, making it suitable for a variety of different applications. The device has a wide operating temperature range from -55C to 175C, allowing it to be used in applications requiring reliability over a wide range of temperatures.
The FQA70N15 is designed for use in applications where low RDS(on) and high current handling capabilities are required. Typical applications include power management, DC/DC conversion, motor control, and general power applications. The device has a low gate-source capacitance, which allows it to switch quickly, making it suitable for switching applications. The FQA70N15 features integrated protection features, making it a safe and reliable solution for a variety of applications.
To better understand how the FQA70N15 operates and how it can be used in various applications, one must first understand the underlying principles of MOSFETs. A MOSFET (metal-oxide semiconductor field-effect transistor) is a type of transistor that consists of an insulated-gate; instead of a traditional gate as found in bipolar transistors. In order for current to flow through the FQA70N15, a voltage must be applied to the gate, thus allowing the drain current to flow.
The gate voltage controls the “on” and “off” states of the FQA70N15. When the gate voltage is greater than the threshold voltage, the FQA70N15 is turned on and allows current to flow. When the gate voltage it is below the threshold voltage, the FQA70N15 is turned off, preventing any current from flowing. This principle is called the “Enhancement Mode”.
The maximum drain current the FQA70N15 can handle is limited by its RDS(on), which is an indication of the resistance between the drain and the source. The lower the RDS(on), the higher the current the FQA70N15 can handle. The FQA70N15 has a RDS(on) of 0.00353 ohms, allowing it to handle a large amount of current.
Another important consideration for the FQA70N15 is its source-drain diode (body diode), which is an intrinsic diode that is formed between the drain and source terminals. This diode has a reverse breakdown voltage Vgss and a forward voltage drop Vf. It is important to know these values in order to ensure that the device is not overdriven.
The FQA70N15 is a versatile component that can be used in a wide range of applications. It is versatile and reliable, and offers high current handling capabilities. The integrated protection features make it a safe and reliable component for a wide range of applications, such as power management, DC/DC conversion, motor control, and general power applications. Understanding the principles of operation and the parameters that affect its operation is essential in order to ensure that the FQA70N15 is used correctly and safely.
The specific data is subject to PDF, and the above content is for reference
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