Allicdata Part #: | FQA7N80C-F109-ND |
Manufacturer Part#: |
FQA7N80C-F109 |
Price: | $ 2.24 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 800V 7A TO-3P |
More Detail: | N-Channel 800V 7A (Tc) 198W (Tc) Through Hole TO-3... |
DataSheet: | FQA7N80C-F109 Datasheet/PDF |
Quantity: | 438 |
1 +: | $ 2.03490 |
10 +: | $ 1.83960 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PN |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 198W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1680pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.9 Ohm @ 3.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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FQA7N80C-F109 is a high-power MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) chip. It is a type of single-gate, field effect transistor (also known as JFET) that is specially designed for power management applications. It is designed to operate in an adjustable pulse current mode, and it can handle up to eight Amps of peak power.
The FQA7N80C-F109 is typically used for switching applications where the load is to be driven intermittently for short periods of time. It is suitable for driving loads such as DC motors, solenoids, and LEDs, among other things. In terms of power management, the FQA7N80C-F109 can be used to control the speed and current of a motor, as well as adjust the pulse duration. It can also be used to regulate voltage and current in battery-based systems.
The working principle of the FQA7N80C-F109 is fairly simple. It consists of three main components: a gate, a drain and a source. The gate is responsible for controlling the flow of electrons between the drain and the source. When a voltage is applied to the gate, it will create a localized electric field which will cause electrons to flow in one direction. This creates a current flow between the drain and the source.
The FQA7N80C-F109 also features a wide operating voltage range (from 10V to 80V), making it suitable for a variety of applications. It is also designed to have a low RDS(on) resistance, meaning that it can switch between high and low states quickly. This is critical for power management applications, as it allows the system to respond more quickly to changes in load current.
Overall, the FQA7N80C-F109 is a versatile, high-power MOSFET chip. It can be used for switching applications such as driving DC motors, LEDs and solenoids, as well as power management such as controlling the speed or pulse duration of a motor. It also boasts a wide operating voltage range and low RDS(on) resistance, making it suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FQA7N80_F109 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 800V 7.2A TO-... |
FQA7N90M_F109 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 900V 7A TO-3P... |
FQA7N90_F109 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 900V 7.4A TO-... |
FQA7N80C | ON Semicondu... | -- | 1000 | MOSFET N-CH 800V 7A TO-3P... |
FQA7N60 | ON Semicondu... | -- | 1000 | MOSFET N-CH 600V 7.7A TO-... |
FQA7N80 | ON Semicondu... | -- | 1000 | MOSFET N-CH 800V 7.2A TO-... |
FQA7N90M | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 900V 7A TO-3P... |
FQA7N90 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 900V 7.4A TO-... |
FQA7N80C-F109 | ON Semicondu... | 2.24 $ | 438 | MOSFET N-CH 800V 7A TO-3P... |
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