Allicdata Part #: | FQA7N60-ND |
Manufacturer Part#: |
FQA7N60 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 7.7A TO-3P |
More Detail: | N-Channel 600V 7.7A (Tc) 152W (Tc) Through Hole TO... |
DataSheet: | FQA7N60 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 152W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1430pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1 Ohm @ 3.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.7A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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Introduction to FQA7N60
The FQA7N60 is a high voltage, low gate charge, N-channel MOSFET (metal-oxide semiconductor field-effect transistor). It is a popular choice for a wide range of applications, including power supplies, motor control, and audio circuitry. This MOSFET is also well-suited for high-side switching, since it features an integrated S.D. (Source-Drain) diode.
Applications of FQA7N60
The FQA7N60 is suitable for applications that require low gate charge, high voltage, and low on-resistance, including:
- DC/DC converters
- Power supplies
- Motor control and inverters
- High-side switches
- Audio circuitry
- Telecommunications
Due to its low power consumption, this MOSFET is also well-suited for battery-operated applications and portable devices.
Features of FQA7N60
The FQA7N60 MOSFET offers several key features, including:
- Low gate charge (5.5nC max)
- High breakdown voltage (600V)
- Low on-resistance (2.2Ω max)
- Low input capacitance
- High temperature and avalanche ratings
- Integrated S.D. (Source-Drain) diode
These features make the FQA7N60 a popular choice for a wide range of applications.
Working Principle of FQA7N60
At the heart of the FQA7N60 is its N-Channel MOSFET design. This component utilizes a unique internal structure, which allows electric current to flow through it under certain conditions. Specifically, when a voltage is applied to the gate terminal, electric current will be able to flow from the source to the drain terminal, allowing the MOSFET to act as a closed switch.
Because of this design, the FQA7N60 requires very little gate charge (5.5nC max) to activate its switching action. This makes it an ideal choice for applications that require fast switching or frequent activation, such as motor control or audio circuitry.
Conclusion
The FQA7N60 is a high voltage, low gate charge N-channel MOSFET. It is a popular choice for power supplies, motor control, and audio circuitry, as well as battery-operated applications and portable devices. This component utilizes a unique internal structure, which allows electric current to flow through it when a voltage is applied to the gate terminal. The FQA7N60 requires very little gate charge to activate its switching action, making it an ideal choice for applications that require fast switching or frequent activation.
The specific data is subject to PDF, and the above content is for reference
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