FQD30N06LTM

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FQD30N06LTM is a high-performance 40V n-channel MOSFET ideal for switching, electronic load switching, and general purpose power. It offers 30A continuous drain current, 100nC input capacitance, and a low on-resistance of 0.0030ohms. This MOSFET can be used in many applications such as power supplies, motor controllers, switching applications, general purpose switching, and more. This article will discuss the application fields and working principle of the FQD30N06LTM.

The FQD30N06LTM is well-suited to be used in power supplies since it is capable of switching large amounts of current at high speed. This device can also be used in motor controllers, as it is able to provide continuous current at high efficiency, while resisting high-frequency switching transients. Furthermore, because of its 0.0030ohms on-resistance, the FQD30N06LTM is suitable for switching applications that require a wide range of currents. Finally, this device can also be used in audio circuits, digital logic, and other general purpose switching applications, due to its impressive switching capabilities and excellent thermal properties.

The working principle of the FQD30N06LTM is based on the physical phenomenon of a MOSFET, which is a type of transistor. A MOSFET is a semiconductor device that consists of two main terminals, the source and the drain, and a gate. When current is applied to the gate, it creates an electric field which attracts electrons from the drain to the source. This process is known as the channel formation, and it is what enables the FQD30N06LTM to switch large amounts of current.

The channel width of the FQD30N06LTM is determined by the voltage applied to the gate. The higher the gate voltage, the wider the channel and the higher the current can flow. As the drain-source voltage increases, however, the channel width reduces, thus limiting the current that can flow. This process is known as self-limiting and it helps to protect the FQD30N06LTM from over-current conditions.

The FQD30N06LTM also has thermal protection built into the device. This protection is designed to prevent overheating and to increase the reliability of the device. The thermal protection is activated when the junction temperature of the MOSFET exceeds a certain threshold. When this happens, the FQD30N06LTM automatically reduces the voltage applied to the gate, which in turn reduces the current flowing through the channel and prevents the device from overheating.

All in all, the FQD30N06LTM is a high-performance, high-current n-channel MOSFET capable of switching high amounts of current at high speed. Its low on-resistance and thermal protection makes it ideal for power supplies, motor controllers, switching applications, and other general purpose applications. Moreover, its working principle is based on the physical phenomena of a MOSFET, which is a type of transistor.

The specific data is subject to PDF, and the above content is for reference