Allicdata Part #: | FQD3N50CTM-ND |
Manufacturer Part#: |
FQD3N50CTM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 2.5A DPAK |
More Detail: | N-Channel 500V 2.5A (Tc) 35W (Tc) Surface Mount D-... |
DataSheet: | FQD3N50CTM Datasheet/PDF |
Quantity: | 1000 |
Series: | QFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2.5 Ohm @ 1.25A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 365pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 35W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The FQD3N50CTM is a N-channel enhancement mode field effect transistor (FET) designed to operate at 500 Volts and featuring a rated current of 37 Amps. It is suitable for applications that require a high current and voltage rating, such as DC-DC converter stages, battery-operated equipment, motor control, and high-voltage switching.
The FQD3N50CTM, like all FETs, is an active three-terminal device, meaning it has the capability to control current due to the fact that its gate terminal has the ability to be controlled independently of its source and drain terminals. Its internal structure consists of three thermally coupled MOSFETs, configured in a cascode configuration.
The FQD3N50CTM is an N-channel FET. The device features an N-type channel formed by the presence of dopants that create an additional electron population within the channel. This additional population gives rise to the FET\'s enhanced conductivity in the channel, allowing the FET to act as a switch or amplifier, depending on the range of voltages present at its gate. To understand this on a deeper level, it is useful to have a good grasp of the semiconductor theory of operation.
The FQD3N50CTM is an enhancement mode FET, meaning it is biased in its "off" state and is operated in the "linear" region when it is "on". This means that the current will be limited by the gate-source voltage, meaning the device can be used for both switched and amplified applications, depending on the voltage present at the gate.
The low gate threshold voltage of the FQD3N50CTM enables it to be used in high voltage circuits, as the device can be switched easily with minimal voltage. It is also relatively immune to temperature fluctuations and EMI/RFI, making it ideal for high reliability applications.
In operation, the FQD3N50CTM acts as a switch or amplifier to control current within a circuit. When switched on, the gate-source and gate-drain voltages cause a number of charge carriers to be drawn into the channel, allowing current to flow between the source and drain terminals. When turned off, the gate-source and gate-drain voltages reverse, causing the charge carriers to be repelled from the channel and blocking current flow.
The key advantage of the FQD3N50CTM is its high current and voltage ratings. Its 500 Volt rating, in particular, makes it an ideal choice for most high voltage control applications. Its low gate threshold voltage also makes it easy to switch in high voltage applications, while its temperature stability and EMI/RFI immunity makes it a reliable choice for harsh environments.
The FQD3N50CTM is a versatile, high power, high voltage N-channel FET, ideal for applications that require high current and voltage control. Its high voltage rating and low gate threshold voltage enable it to be used in demanding high voltage applications, while its temperature stability and EMI/RFI immunity make it suitable for harsh conditions. The FQD3N50CTM is an essential component for a wide range of circuits in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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