FQD3P50TM-F085 Discrete Semiconductor Products |
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Allicdata Part #: | FQD3P50TM-F085OSTR-ND |
Manufacturer Part#: |
FQD3P50TM-F085 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 500V 2.1A DPAK |
More Detail: | P-Channel 500V 2.1A (Tc) 2.5W (Ta), 50W (Tc) Surfa... |
DataSheet: | FQD3P50TM-F085 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 660pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | Automotive, AEC-Q101, QFET® |
Rds On (Max) @ Id, Vgs: | 4.9 Ohm @ 1.05A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.1A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FQD3P50TM-F085 is a type of radio frequency power (RF) power field effect transistor (FET). It is a single-JFET device, meaning that it is composed of a single “Junction Field Effect Transistor”. This type of transistor has a variety of uses and applications, including amplification, mixing, switching, and frequency conversion. It is a type of switching device that allows high-frequency signals to be sent through small amounts of current. The FQD3P50TM-F085 is commonly used in electronics, telecommunications, and automotive applications.
The FQD3P50TM-F085 has a wide range of applications. It is able to operate in the frequency range from DC up to 6 GHz, and is suitable for radio transmitter and receiver applications. It is also used for high-frequency analog switches, and for high-performance wireless links. The FQD3P50TM-F085 is often used in voltage amplifiers, and for high-frequency amplifiers.
The FQD3P50TM-F085 works by using two or more \'gate control\' regions, or circuits. The first control region consists of two \'source\' and \'drain\' electrodes, which are separated by a channel that is made of semiconductor material. Applying a voltage to the gate region will cause the channel to be filled with electrons, which in turn results in current flow between the source and the drain. By varying the voltage applied to the gate region, the current flowing between the source and the drain can be dynamically controlled.
The FQD3P50TM-F085 is able to produce an extremely high level of current gain, which allows it to be used in high-frequency amplifier applications. This transistor has a maximum power dissipation of 0.15 watts and an operating temperature range of -40 to 92 °C. It requires a minimum gate voltage of 4V for operation, and it can handle up to a maximum drain voltage of 20V. It is compatible with most TTL and CMOS logic systems.
The FQD3P50TM-F085 is a highly reliable, efficient, and reliable transistor. It is a great choice for applications requiring high-frequency operation, switching, and amplifying. Its primarily use is in amplifiers, analog switches, and wireless links, however its use can vary depending on the specific application. The wide range of applications and features of the FQD3P50TM-F085 make it a great choice for any application requiring reliable and efficient operation.
The specific data is subject to PDF, and the above content is for reference
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