FQD3P50TM-F085 Allicdata Electronics

FQD3P50TM-F085 Discrete Semiconductor Products

Allicdata Part #:

FQD3P50TM-F085OSTR-ND

Manufacturer Part#:

FQD3P50TM-F085

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 500V 2.1A DPAK
More Detail: P-Channel 500V 2.1A (Tc) 2.5W (Ta), 50W (Tc) Surfa...
DataSheet: FQD3P50TM-F085 datasheetFQD3P50TM-F085 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Series: Automotive, AEC-Q101, QFET®
Rds On (Max) @ Id, Vgs: 4.9 Ohm @ 1.05A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FQD3P50TM-F085 is a type of radio frequency power (RF) power field effect transistor (FET). It is a single-JFET device, meaning that it is composed of a single “Junction Field Effect Transistor”. This type of transistor has a variety of uses and applications, including amplification, mixing, switching, and frequency conversion. It is a type of switching device that allows high-frequency signals to be sent through small amounts of current. The FQD3P50TM-F085 is commonly used in electronics, telecommunications, and automotive applications.

The FQD3P50TM-F085 has a wide range of applications. It is able to operate in the frequency range from DC up to 6 GHz, and is suitable for radio transmitter and receiver applications. It is also used for high-frequency analog switches, and for high-performance wireless links. The FQD3P50TM-F085 is often used in voltage amplifiers, and for high-frequency amplifiers.

The FQD3P50TM-F085 works by using two or more \'gate control\' regions, or circuits. The first control region consists of two \'source\' and \'drain\' electrodes, which are separated by a channel that is made of semiconductor material. Applying a voltage to the gate region will cause the channel to be filled with electrons, which in turn results in current flow between the source and the drain. By varying the voltage applied to the gate region, the current flowing between the source and the drain can be dynamically controlled.

The FQD3P50TM-F085 is able to produce an extremely high level of current gain, which allows it to be used in high-frequency amplifier applications. This transistor has a maximum power dissipation of 0.15 watts and an operating temperature range of -40 to 92 °C. It requires a minimum gate voltage of 4V for operation, and it can handle up to a maximum drain voltage of 20V. It is compatible with most TTL and CMOS logic systems.

The FQD3P50TM-F085 is a highly reliable, efficient, and reliable transistor. It is a great choice for applications requiring high-frequency operation, switching, and amplifying. Its primarily use is in amplifiers, analog switches, and wireless links, however its use can vary depending on the specific application. The wide range of applications and features of the FQD3P50TM-F085 make it a great choice for any application requiring reliable and efficient operation.

The specific data is subject to PDF, and the above content is for reference

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