FQD3P50TM Discrete Semiconductor Products |
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Allicdata Part #: | FQD3P50TMTR-ND |
Manufacturer Part#: |
FQD3P50TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 500V 2.1A DPAK |
More Detail: | P-Channel 500V 2.1A (Tc) 2.5W (Ta), 50W (Tc) Surfa... |
DataSheet: | FQD3P50TM Datasheet/PDF |
Quantity: | 2500 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 660pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 4.9 Ohm @ 1.05A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.1A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FQD3P50TM is a field-effect transistor (FET) with a single source drain, manufactured by Fairechips, a major global leader in semiconductor components. It is a key component in a growing list of applications, from consumer and industrial electronics to advanced computing solutions. The FQD3P50TM has the ability to control and regulate current flow in circuits, making it a useful tool for managing system performance.
The FQD3P50TM works in a similar manner to other FETs and MOSFETs, as it utilises the majority charge carrier mobility to regulate current. It features an insulated gate, usually composed of silicon oxide. An applied voltage between the gate and the source can control the electric potential in the channel and establish the current flow between the source (S) and drain (D).
While the gate voltage is held at a certain level, the FQD3P50TM allows a range of current to flow through the channel. This range depends on how much charge carriers can transit the channel, which is directly proportional to the applied gate voltage as well as the width of the channel and the mobility of charge carriers. The charge carriers are mostly electrons and holes, which interact with the semiconductor material in the device, creating a current flow.
The FQD3P50TM features 12V maximum drain-source voltage, 175V maximum drain-gate voltage, a -55°C to 150°C junction temperature range, a 25 mOhm maximum drain-source on-resistance and a 5.0A maximum drain current. It is a versatile device, well-suited to various applications, such as DC-DC converters, battery charging systems, motor control and automotive audio systems.
The FQD3P50TM’s wide range of features makes it ideally suited for use in complex multi-function systems. It can be used to regulate and control the current flow in circuits, protecting devices from dangerous levels of current and enabling devices to run more efficiently. The low on-resistance of the FQD3P50TM also enables higher current efficiency, helping to save energy over protracted system use.
In an audio system, for instance, the FQD3P50TM can be used to regulate the current in each amplifier, protecting the device from current overloads. This also helps to ensure consistent sound volume and quality, allowing for greater clarity and a better listening experience. It also saves power by regulating the current drawn by the device, increasing system efficiency. In automotive systems, the FQD3P50TM helps to ensure complex multimedia and driver assistance systems function correctly and efficiently.
Fairechip’s FQD3P50TM is a versatile and reliable device with the ability to transmitter and facilitate current in circuits efficiently and cost-effectively. As more applications become increasingly complex and interconnected, components such as the FQD3P50TM will continue to be essential in the development of more advanced systems.
The specific data is subject to PDF, and the above content is for reference
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