Allicdata Part #: | FQD3N40TM-ND |
Manufacturer Part#: |
FQD3N40TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 400V 2A DPAK |
More Detail: | N-Channel 400V 2A (Tc) 2.5W (Ta), 30W (Tc) Surface... |
DataSheet: | FQD3N40TM Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 230pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 7.5nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 3.4 Ohm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FQD3N40TM is a normal-level N-Channel enhancement mode insulated-gate field effect transistor (IGFET) which has been designed by Fairchild Semiconductor as part of their advanced powerTrench® MOSFET family. The device exhibits excellent dynamic and high-frequency performance and is suitable for a wide range of switch-mode power supplies. This article aims to provide an overview of FQD3N40TM, including its application field and working principle.
Application field
The FQD3N40TM is an N-channel MOSFET that is commonly used as a switch in power applications. This includes switch mode power supplies (SMPS), computer power supplies, power converters, chargers and other power management applications. Aside from switch applications, it can also be used as an adjustable current limiter in power supplies, motor control applications and motor drivers. Additionally, the FQD3N40TM can be used as an amplifier and buffer in high-speed MOSFET circuits.
Working Principle
The principle of operation of an N-channel MOSFET is very similar to that of an N-channel junction field effect transistor (JFET). The FQD3N40TM is an insulated-gate FET with three terminals - Gate, Drain and Source. As with JFETs, the FQD3N40TM operation is determined by the amount of voltage applied to the Gate terminal. When no voltage is applied, the FQD3N40TM can be thought of as an open switch, allowing no current to flow between the Drain and Source terminals. As the voltage is increased, a positive electric field is created around the Gate terminal, which in turn depletes the negative charge carriers in the channel region (in this case, electrons). This decreases the resistance between the Drain and Source terminals, allowing current to flow. When the voltage is increased to a certain level, the resistance between the two terminals becomes so low that it acts as if the FQD3N40TM is a closed switch, allowing maximum conduction.
Advantages of FQD3N40TM
The FQD3N40TM has a number of advantages over other MOSFETs and field effect transistors. For one, it has a low on-resistance, which makes it well suited for high current applications. It also has a wide operating voltage range, which allows it to be used in applications that require a wide variety of voltages. In addition, it has a high maximum breakdown voltage, making it suitable for use in both high voltage and low voltage applications. Finally, it has a fast switching time, which makes it an ideal choice for high speed applications.
Conclusion
The FQD3N40TM is a normal-level N-channel enhancement mode insulated-gate field effect transistor (IGFET) from Fairchild Semiconductor\'s advanced powerTrench® MOSFET family. It is commonly used as a power switch and is well suited for high current and high speed applications, as well as wide operating voltage applications. It exhibits excellent dynamic and high-frequency performance and is generally considered to be a reliable device.
The specific data is subject to PDF, and the above content is for reference
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