FQD3P20TM

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 37W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	250pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	8nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	2.7 Ohm @ 1.2A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	2.4A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The FQD3P20TM is a N-channel, depletion MOSFET created using advanced semiconductor technologies for better performance and reliability. This particular device has a maximum drain current rating of 8.1 Amps, a maximum continuous drain-source voltage rating of 20V, and a maximum gate-source voltage rating of 20V. It is specifically designed to be utilized in applications that require high speed switching and low On-resistance.The FQD3P20TM is a versatile and efficient transistor, which makes it suitable for a wide range of applications. Common applications for the FQD3P20TM include: DC-DC converters, full-bridges (DC-AC) inverters, switching regulators, Class-D H-Bridge amplifiers, and battery-powered circuit designs. In these various applications, the FQD3P20TM can be used as a switch, an amplifier, or a combination of both.One of the defining characteristics of the FQD3P20TM is its extremely low on-resistance. This is especially important for devices in the DC-DC converter application as it allows for efficient power dissipation and a high degree of efficiency. In general, the FQD3P20TM has a typical on-resistance of only 0.004 ohms, which is significantly lower than most other similar transistors. This is especially important in applications that require high switching rates or high current loads.When it comes to operation, the FQD3P20TM is a depletion-mode device, meaning it is off when there is no voltage applied to the gate. The junction threshold voltage of the FQD3P20TM is typically 2-3 volts. This means that the MOSFET will conduct current when a voltage of 2-3 volts is applied to the gate. It should be noted that the FQD3P20TM will exhibit a voltage drop across its drain-source terminals when it is conducting current, which should be taken into consideration when designing circuits incorporating the device.The FQD3P20TM also has a robust safety-rating, with a maximum transient drain-source voltage of 25V and a maximum transient drain-source current being able to withstand up to 20A. This is important in applications where voltage overshoots and transients can occur, reducing the risk of the device being damaged.Overall, the FQD3P20TM is an excellent choice for a range of applications due to its low on-resistance and robust safety features. With its advanced semiconductor technology, high switching speed and low on-resistance, the FQD3P20TM is well-suited for a range of applications requiring an efficient and reliable solution. Its wide range of application possibilities, robust safety-rating, and low on-resistance make the FQD3P20TM a great choice for many circuit designs.

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