Allicdata Part #: | FQD30N06TF_F080-ND |
Manufacturer Part#: |
FQD30N06TF_F080 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 22.7A DPAK |
More Detail: | N-Channel 60V 22.7A (Tc) 2.5W (Ta), 44W (Tc) Surfa... |
DataSheet: | FQD30N06TF_F080 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | QFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 22.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 11.4A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 945pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 44W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The FQD30N06TF_F080 is an Enhancement Mode, Field-effect Transistor (FET) that is most commonly used in a wide variety of applications. The transistor has an N-channel (hence the "N"). It utilizes an insulated gate structure, which is how it is able to achieve better performance than a regular FET.
The FQD30N06TF_F080 has a maximum drain source voltage of 30 volts, a drain source on-resistance of 6 ohms, and drain source current is 100 amps. It also has a maximum gate threshold voltage of 4 volts, a maximum power dissipation of 175 watts, and a thermal resistance of 1.2 degrees Celsius per watt.
The FQD30N06TF_F080 is particularly useful for switching applications such as motor control, speed switching, and power supply regulation. It is also commonly used in voltage regulator circuits and current limiters. Some of its other uses include power amplification and voltage discrimination, as well as rectification, inversion, and interface control.
When using the FQD30N06TF_F080, it is important to keep in mind that it can be damaged by static electricity, so it should be handled with care. Additionally, it should be stored in an anti-static bag within a static shielding bag when not in use.
The FQD30N06TF_F080 works through a principle called Enhancement, which is a process of increasing the current flow between two points by introducing electrical energy into the circuit. This is caused by the increase in the difference of electrical potential between the two points. This is done by affecting the composition, shape, or orientation of the semiconductor material. The FQD30N06TF_F080 works by increasing the voltage when the gate voltage is increased above the threshold voltage. Thus, it is able to increase the current through the gate, allowing for control of the current flow between the source and the drain.
The FQD30N06TF_F080 is an excellent choice for power switching applications as its low on-resistance, low gate threshold voltage, and high drain-source current make it an excellent choice. Additionally, its high power dissipation and low thermal resistance make it suitable for high-power applications. With its wide variety of applications, the FQD30N06TF_F080 is a very popular choice among engineers and hobbyists alike.
The specific data is subject to PDF, and the above content is for reference
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