FQD3N30TF

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The FQD3N30TF is a N-Channel MOS field effect transistor that operates with a wide voltage range of 20 volts, making it suitable for use in many applications. It has an on-resistance of 30Ω, making it an excellent choice for power management. FQD3N30TF is a MOSFET with three terminals consisting of a source, gate, and drain. The transistor is an enhancement type Field-Effect Transistor (FET), meaning there is no need to supply a current to the gate in order to activate the internal channel of the transistor·, instead, a positive voltage on the gate relative to the source makes the channel conductive. When the gate voltage of the FQD3N30TF is negative relative to the source, the channel is turned off or “pinched off” and does not conduct. This function makes the FQD3N30TF perfect in switching applications, allowing a small gate input to control a large size load.The FQD3N30TF MOSFET is a switching transistor, commonly used in power amplifiers, high voltage DC to DC converters, and in switching applications which require high currents and low voltage drops. This transistor is designed to handle large loads and, due to its on-resistance of only 30Ω and a total gate charge of 270nC, it is also well-suited for high-frequency switching. Its on-resistance is typically under the RDS(on) of other MOSFETs, making it ideal for use in power converters. In DC motors, solenoids and relays, the FQD3N30TF is ideal for driving large currents. It also makes a great choice for LED driver circuits, and it can be used as a switch to turn on and off current to a motor, or as a switch to turn on and off loads. In short, the FQD3N30TF is an ideal choice for many power applications due to its wide voltage range and low resistance. Its three-terminal design makes it an excellent choice for controlling current, and its low-power input coupled with high-power output make it suitable in switching applications including power conversion and LED drivers.

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