Allicdata Part #: | FQD3N30TM-ND |
Manufacturer Part#: |
FQD3N30TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 300V 2.4A DPAK |
More Detail: | N-Channel 300V 2.4A (Tc) 2.5W (Ta), 30W (Tc) Surfa... |
DataSheet: | FQD3N30TM Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 230pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 2.2 Ohm @ 1.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.4A (Tc) |
Drain to Source Voltage (Vdss): | 300V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FQD3N30TM is a family of N-Channel Enhancement Mode Power MOSFETs available in a standard SO-8 package. It is commonly used in electronic power supplies, inverters, motor controllers, and other switch mode applications. This article will discuss the application field and working principle of the FQD3N30TM.
Application Field
The FQD3N30TM is a general-purpose MOSFET that can be used in a variety of switching applications such as motor controllers, inverters, and power supplies. The device is designed for a drain-source voltage up to 30 volts and a drain current up to 12 amps. It also has a low on-resistance of 50 mohms across the entire operating temperature range. The low input capacitance makes it useful for high-frequency applications such as frequency converters. The low gate-source capacitance also helps reduce switching losses in power electronic circuits.
Working Principle
The FQD3N30TM is an N-channel MOSFET, which means it employs a current flow between the drain and source terminals. This current is controlled by the gate-source voltage. When the gate-source voltage is increased, the current conducted between the drain and source terminals increases exponentially. Conversely, when the gate-source voltage is decreased, the current conducted between the drain and source terminals decreases exponentially.
The FQD3N30TM MOSFET has an extremely low input capacitance which means it can be used in high-frequency switching applications. This makes it an ideal choice for circuit designers looking to reduce power losses incurred during switching. The device also has a low gate-source capacitance which helps reduce switching losses even further. The low on-resistance of the FQD3N30TM also reduces power losses during operation.
The FQD3N30TM MOSFET is a representative example of an N-Channel Enhancement Mode Power MOSFETs used in a variety of applications. It has a low input capacitance and low on-resistance which makes it a useful device for high-frequency switching applications. Additionally, its low gate-source capacitance helps reduce switching losses. The FQD3N30TM is a versatile device and is widely used across numerous industries.
The specific data is subject to PDF, and the above content is for reference
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