FZT603TA Allicdata Electronics

FZT603TA Discrete Semiconductor Products

Allicdata Part #:

FZT603TR-ND

Manufacturer Part#:

FZT603TA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN DARL 80V 2A SOT-223
More Detail: Bipolar (BJT) Transistor NPN - Darlington 80V 2A 1...
DataSheet: FZT603TA datasheetFZT603TA Datasheet/PDF
Quantity: 7000
Stock 7000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.13V @ 20mA, 2A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 500mA, 5V
Power - Max: 2W
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: FZT603
Description

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The FZT603TA is a small signal, general-purpose, NPN, silicon transistor. It is classified as a single bipolar junction transistor (BJT). BJTs are transistors with two junctions between two terminals, the base and collector. The electrical properties of the device allow it to be used in circuits that require amplifying, switching, linear control, or switching current sources.

Designed to operate over a wide range of temperatures (-55 to +125°C), the FZT603TA has a low noise figure and provides stable performance. Its gain characteristics are minimal for an NPN transistor, making it less sensitive to external noise when used in a weakly referenced circuit.

The FZT603TA has a single-stage, DC biasing configuration with low input and output impedance that is ideal for biasing configurations up to 1GHz operating frequency. The transistor is well-suited for designs with a wide range of input and output levels. In addition, the FZT603TA is designed with a high current gain and low noise figure, making it useful in a variety of applications.

The FZT603TA is used in a wide variety of applications due to its broad range of operating temperatures and stable performance. Some of its primary applications include audio amplifiers, high frequency amplifiers, and general-purpose switching. It is commonly used in circuit boards where reliable switching among multiple devices is required. This includes logic circuits, memory circuits, and logic-level conversion.

The working principle of the FZT603TA is similar to that of other BJTs. It is a three-layer, N-type semiconductor that is made of two p-type and one n-type material. When circuits with low input and output levels are used, the current gain is determined by the ratio of collector current (Ic) to the base current (Ib) or hFE. When the base voltage increases, the collector current also increases until it reaches saturation.

When the collector voltage decreases, the collector current decreases according to its transfer function. This specific BJT is designed to provide consistent performance over a wide temperature range and provide users with reliable and stable operation. The FZT603TA is also designed with a high current gain and low noise, making it suitable for applications that require minimal noise.

In conclusion, the FZT603TA is a general-purpose, NPN, silicon transistor, classified as a single bipolar junction transistor (BJT). It has a wide range of operating temperatures (-55 to +125°C) and has a low noise figure. It is used in several applications, including audio amplifiers, high frequency amplifiers, and general-purpose switching. The working principle of the FZT603TA is similar to that of other BJTs and it is designed with a high current gain and low noise figure.

The specific data is subject to PDF, and the above content is for reference

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