FZT653TA Allicdata Electronics

FZT653TA Discrete Semiconductor Products

Allicdata Part #:

FZT653TR-ND

Manufacturer Part#:

FZT653TA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 100V 2A SOT-223
More Detail: Bipolar (BJT) Transistor NPN 100V 2A 175MHz 2W Sur...
DataSheet: FZT653TA datasheetFZT653TA Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Power - Max: 2W
Frequency - Transition: 175MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: FZT653
Description

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Transistors - Bipolar (BJT) - Single

FZT653TA is a type of single bipolar junction transistor device. It is used for a variety of applications, especially those that require high frequency circuit operations. It is a small-signal transistor with good gain characteristics. In addition, it has good low-frequency stability and high-frequency performance.

Working Principle

FZT653TA devices work on the same principle as other transistors. When a current flows through the base, it creates narrow regions at the junction of the collector and emitter. These regions are known as the collector-base region and the emitter-base region. When the current is increased the base region increases in size, allowing electrons to move more easily between the emitter and collector regions, thus increasing the current.

The base region also controls the voltage of the current flowing through the collector-emitter region. The base region is shallow, which means that the current flowing through it can be modulated easily by changes in voltage applied to the base. This is known as the voltage-controlled switch effect and is useful in transistor applications.

Applications of FZT653TA

The FZT653TA is suitable for a variety of applications, such as:

  • Discrete amplifiers
  • Audio power amplifier stages
  • Switching applications
  • Low noise amplifiers
  • Aural preamplifier stages
  • Signal processing circuits

FZT653TA is also suitable for other applications, such as temperature sensing, logic circuits, voltage regulator modules, power supplies and digital signal processing. It is particularly useful for high-frequency applications as it has good high-frequency stability.

FZT653TA is suitable for low-noise operation and its low-frequency stability isgood, making it appropriate for both low- and high-frequency applications. It is also suitable for use in power amplifier circuits, as the current can be modulated easily.

FZT653TA is also often used in switching applications, such as power supplies, light dimmers and motor controllers. The device’s fast switching times make it ideal for these applications.

Conclusion

FZT653TA is a single bipolar junction transistor device, suitable for a variety of applications, particularly those requiring high-frequency capability. Its good low-frequency stability and high-frequency performance make it a useful device for audio power amplifier stages, discrete amplifiers, low-noise amplifiers, and signal processing circuits. It is also suitable for use in voltage regulator modules and power supplies, as well as for switching applications.

The specific data is subject to PDF, and the above content is for reference

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