FZT696BTA Discrete Semiconductor Products

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The FZT696BTA is a Bipolar Junction Transistor (BJT) designed for a variety of applications. Its small size and high current gain capability make it an ideal choice for a number of different applications. The FZT696BTA is a NPN transistor, with an epitaxial layer grown over a silicon substrate. This configuration allows for high current gain and frequency response when operated in the active region.

The FZT696BTA has a high current gain of 150, which allows it to be used in a variety of amplifier circuits. This transistor can be used to construct both single stage and multistage amplifier circuits. Its high current gain capability also allows it to be used in power circuits, where it can be used to provide a high current output.

The FZT696BTA also has a low saturation voltage, which allows it to be used in logic circuits. This transistor can be used to construct logic gates, multiplexers, and other logic circuits. It can also be used in analog circuits, such as the ones used in audio applications.

The FZT696BTA is designed to operate at a wide range of power levels. The maximum power it can handle is 300mW, with a maximum collector current of 1A. The transistor can operate in a wide range of temperatures, from -65C to +150C, making it suitable for operation in both hot and cold environments.

The FZT696BTA is a versatile transistor, which can be used in a variety of different applications. Its small size, high current gain, and low saturation voltage make it a perfect choice for many different types of circuits.

The working principle of the FZT696BTA is fairly straight forward. It consists of three layers, the emitter, the base, and the collector. The base is connected to a voltage source, such as a battery, and the emitter is connected to ground. When a current is passed through the base, it causes electrons to flow from the emitter to the base, and from the base to the collector. This flow of electrons causes a current to flow from the collector to the emitter, thus completing the circuit.

The current gain of the transistor is usually specified by its beta, which is the ratio of collector current to base current. For example, if the beta of the transistor is 200, then for every 2mA of base current, 400mA of collector current will be produced.

The FZT696BTA is a versatile and reliable transistor, suitable for a wide variety of applications. Its small size, high current gain, and low saturation voltage make it an ideal choice for a number of different electronic circuits.

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