FZT651TC Allicdata Electronics
Allicdata Part #:

FZT651TC-ND

Manufacturer Part#:

FZT651TC

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 60V 3A SOT223
More Detail: Bipolar (BJT) Transistor NPN 60V 3A 175MHz 2W Surf...
DataSheet: FZT651TC datasheetFZT651TC Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Power - Max: 2W
Frequency - Transition: 175MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: FZT651
Description

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FZT651TC is a type of bipolar junction transistors (BJTs). A bipolar junction transistor is a type of non-linear semiconductor that can be used for amplification or switching applications. It is made up of three regions: the base, the collector and the emitter. It works by controlling the flow of current from the collector to the emitter through the base. The base-emitter and base-collector junction is used to control the current through the transistor and to achieve various types of desired output. BJTs are commonly used in amplifiers, oscillators, switches, converters and logic gates.

FZT651TC is a single BJT, meaning a single semiconductor junction between the collector and emitter. It has a very low saturation voltage, making it an ideal choice for many applications in which power conservation is desired. It also provides very good noise immunity, making it a great choice for signal switching applications. In addition, it is able to provide excellent conducting current performance in the range of 10A to 100A. Because of these advantages, FZT651TC is often used in high-power applications, such as power supplies and motor controllers.

The working principle of FZT651TC is based on the principle of a BJT. When a voltage is applied to the base, the current flowing through the base-collector junction is increased, while the current through the base-emitter junction is decreased. This causes the current to flow in the opposite direction through the collector, thus amplifying the signal. This process is known as "forward biasing" and is used to control the current and voltage of an output device.

The exact application of FZT651TC will depend on the specific design of the circuit. Since it is able to provide excellent current performance, it is commonly used in high-power applications, such as power supplies and motor controllers. It can also be used in transistor amplifiers, oscillators, switches and logic gates. In addition, it can be used in voltage regulators and voltage references. It is also used in radio equipment for applications such as oscillators and amplifiers.

Overall, FZT651TC is an excellent choice for many applications in which power conservation is desired. It has a low saturation voltage and good noise immunity, making it ideal for signal switching applications. It is particularly suitable for use in high-power applications, such as power supplies and motor controllers. In addition, it can be used in transistor amplifiers, oscillators, switches and logic gates, as well as in voltage regulators, voltage references and radio equipment.

The specific data is subject to PDF, and the above content is for reference

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