FZT694BTC Allicdata Electronics
Allicdata Part #:

FZT694BTC-ND

Manufacturer Part#:

FZT694BTC

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 120V 1A SOT223
More Detail: Bipolar (BJT) Transistor NPN 120V 1A 130MHz 2W Sur...
DataSheet: FZT694BTC datasheetFZT694BTC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 400mA, 2V
Power - Max: 2W
Frequency - Transition: 130MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: FZT694
Description

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FZT694BTC is a single bipolar junction transistor (BJT), which is designed for use in various applications. BJT transistors are widely used because they operate as an open switch when a small current is applied to its base. In this way, it can control the larger current flowing through the collector and emitter. As a result, FZT694BTC can be used in many applications including power control, RF power amplification, and switching applications.

FZT694BTC contains three layers of semiconductor material – a p-type layer at the bottom, an n-type layer at the middle and another p-type layer at the top. The p-n junction formed at the boundary between the n-type and p-type layers forms a diode. The diode conducts current in one direction, but blocks it in the other. This property is used to control current in many different applications.

FZT694BTC operates on the principle of minority carrier injection. This means that it passes current between its collector and emitter if a small current is injected into its base. Current injected into the base of the BJT is amplified by the transistor and flows as a larger current between the collector and emitter. This larger current can be used to control the operation of other transistors or components, allowing it to be used in power control and switch applications. Additionally, FZT694BTC can also be used in RF power amplification applications due to its high breakdown voltage and high gain.

FZT694BTC is used extensively in electronic circuits, typically in applications such as switching, power control, and power amplification. As a result, it is used in a wide range of applications including automotive, industrial, telecommunications, computing, and consumer electronics. Additionally, it is also used in RF power amplifiers and RFID chip manufacturing.

In conclusion, FZT694BTC is a single bipolar junction transistor (BJT) designed for various applications. It operates on the principle of minority carrier injection and can be used in power control, RF power amplification, and switching applications. Due to its versatility and reliability, it is used extensively in many applications, including automotive, industrial, telecommunications, computing and consumer electronics. Additionally, it is also used in RF power amplifiers and for RFID chip manufacturing.

The specific data is subject to PDF, and the above content is for reference

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