Allicdata Part #: | FZT692BTC-ND |
Manufacturer Part#: |
FZT692BTC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 70V 2A SOT223 |
More Detail: | Bipolar (BJT) Transistor NPN 70V 2A 150MHz 2W Surf... |
DataSheet: | FZT692BTC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 70V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 150 @ 1A, 2V |
Power - Max: | 2W |
Frequency - Transition: | 150MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | FZT692 |
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Bipolar junction transistors (BJTs) are widely used electronic devices and are found in a variety of applications, from simple amplifier circuits to switch mode power supplies. The FZT692BTC is an NPN silicon epitaxial BJT with a maximum power dissipation of 500 mW and a voltage rating of 25V and an emitter current of 20A. This makes it suitable for a wide range of applications.
The FZT692BTC is most commonly used as a switch, being able to open or close a circuit depending on the polarity of the applied voltage. This is achieved by varying the collector current of the transistor. When a positive voltage is applied to the base of the transistor, a current is drawn through the base, which in turn forces electrons from the emitter into the collector and switches on the transistor. Conversely, when the base voltage is made negative, the transistor switches off. The FZT692BTC is also useful for amplifying or attenuating signals or to generate varying power levels.
The FZT692BTC works on the principle of bipolar junction transistor or BJT. It is constructed from three different layers of semiconductor material; n-type, p-type and n-type. As a result, it is a three-terminal device which is made up of two p-n junctions, between emitter and base and between base and collector.
The term bipolar refers to the fact that the transistor has two currents in the form of electrons and holes. When the base terminal is biased positively with respect to the emitter, the collector current increases exponentially with the base current. This is known as forward bias and this is the operation which is utilised in the FZT692BTC. When looking at the efficiency of the device, it has an excellent current gain of 900 to 1500.
In addition to these features, the FZT692BTC also benefits from having a low saturation voltage and requires only a low base current to achieve the required collector current. Therefore, it is an ideal choice for applications such as analog integrated circuits, DC-to-DC converters, motor drivers, and power supplies.
Therefore, the FZT692BTC is a versatile and reliable bipolar NPN silicon epitaxial junction transistor, widely used in industry for switching, amplifying and attenuating signals, or generating different power levels in applications ranging from simple amplifier circuits to switch mode power supplies.
The specific data is subject to PDF, and the above content is for reference
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