FZT649TA Discrete Semiconductor Products

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Introduction

The FZT649TA is a low-current NPN transistor designed for use in a wide range of applications, from power control to signal switching. It features a useful high breakdown voltage and low saturation voltage, making it suitable for AC and DC power control applications such as motor controllers, power supplies, relay drivers, and others. It also provides low on-resistance, making it an effective signal selector or switching device.

Device Architecture

The FZT649TA is a single-sourced planar NPN bipolar junction transistor (BJT). The BJT is an active device consisting of two blocks, the emitter and the collector terminals. In the active region, current flows from the emitter\'s conduction band, across a narrow base region, to the collector\'s valence band. The current is then converted into voltage, allowing the transistor to amplify or switch electrical signals.

Operation

In operation, the FZT649TA can be used either in current gain or voltage gain mode. In the current gain mode, the current from the emitter is amplified or multiplied, allowing the transistor to control or switch high currents at low input levels. In voltage gain mode, the transistor is operated so as to keep the base at a fixed voltage. This allows the transistor to amplify or switch small signals at high input levels. The FZT649TA’s operation is best described as a common-emitter configuration, where the collector current is proportional to the emitter current. The gain, or amplification level, is represented by the current gain (hfe), which is determined by the ratio of the collector current to the emitter current.

Device Parameters

The FZT649TA device parameters are optimized to give excellent performance in applications such as motor controllers, power supplies and relay drivers. The device has a very low saturation voltage (VCEsat) of 0.25V, which is ideal for AC and DC power control applications, and a high breakdown voltage (VCB) of 75V, allowing the device to be used in high voltage applications. It also features a low on-resistance (ron) of 0.08Ω, allowing it to be used as a signal selector or switching device.

Conclusion

The FZT649TA is a single-sourced planar NPN bipolar junction transistor (BJT) designed for a wide range of applications, from power control to signal switching. Its low saturation voltage, high breakdown voltage, and low on-resistance make it an ideal device for AC and DC power control applications, and for signal switching or selection.

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