FZT657QTA

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The FZT657QTA is a PNP high speed switching transistor created by Fairchild Semiconductor and marketed as an off-the-shelf component. It is a general-purpose transistor known for its reliable performance and high-speed switching capability. It was designed to be used in applications such as power supply circuits, audio amplifiers, and high-frequency switching devices.

The FZT657QTA is classified as a single bipolar junction transistor (BJT). It is composed of two layers of doped silicon material separated by a thin, undoped silicon region. It is a three-terminal device with the terminals labeled Base, Collector, and Emitter. The Base terminal is the control terminal and is used to control the current that flows between the Collector and the Emitter of the transistor.

When a small current is applied to the Base of the FZT657QTA, the Collector-Emitter current will increase dramatically. This phenomenon, known as current gain or amplification, is the most important function of a BJT. The current gain of the FZT657QTA is typically over 200, meaning that the current at the Collector-Emitter terminals can be 200 times greater than the current applied to the Base terminal. This high current gain allows the FZT657QTA to be used in switching and amplifying applications.

The FZT657QTA also offers high Unity Gain Frequency, also known as the cutoff frequency. This is the frequency at which the current gain is reduced to 1. The Unity Gain Frequency of the FZT657QTA is typically over 200 MHz, meaning that it is well suited for high frequency switching devices and applications.

The FZT657QTA is a reliable device, with a maximum supply voltage of 45 volts, a collector current of 0.5 A (continuous) and a low operating temperature range of -55 to 150 degrees Celsius. Its low noise and high frequency characteristics also make it an excellent choice for power supply circuits and audio amplifiers.

The FZT657QTA is a reliable, general-purpose transistor created by Fairchild Semiconductor that has excellent performance and high-speed switching capabilities. It is classified as a single bipolar junction transistor (BJT), composed of two layers of doped silicon material separated by a thin, undoped silicon region. This device has a current gain of over 200, Unity Gain Frequency of over 200 MHz, a maximum supply voltage of 45 volts, a collector current of 0.5 A (continuous) and an operating temperature range of -55 to 150 degrees Celsius, making it well suited for a wide variety of high frequency switching and amplifying applications.

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