FZT688BTC Allicdata Electronics
Allicdata Part #:

FZT688BTC-ND

Manufacturer Part#:

FZT688BTC

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 12V 4A SOT223
More Detail: Bipolar (BJT) Transistor NPN 12V 4A 150MHz 2W Surf...
DataSheet: FZT688BTC datasheetFZT688BTC Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 3A, 2V
Power - Max: 2W
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: FZT688
Description

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FZT688BTC is a device that is classified as a single bipolar junction transistor (BJT). It is commonly used in portable electronics, consumer products, and automotive applications such as power control, voltage regulation, and signal control. This transistor type is also suitable for use in a variety of other applications where its wide range of operating parameters, relative high current gain, and high switching speed make it a great choice.

A transistor is a three-terminal electronic component that has the ability to amplify electrical signals or act as a switch. The FZT688BTC is a PNP type bipolar junction transistor (BJT), which means it has two terminals (collector and emitter) connected to a base. It is also comprised of a central semiconductor layer located between the collector and emitter layers of the device. The base terminal, which is used to control the current flowing through the device, is connected to the central area of the semiconductor layer.

The FZT688BTC, like all other PNP transistors, allows a current to flow between its emitter and collector terminals when its base is negative and there is a forward bias voltage between its emitter and base terminals. It has a high current gain and can be switched off quickly when the base-emitter junction is reversed biased. When the base-emitter junction becomes forward biased, the device will switch on and the current flowing through the device will increase exponentially.

The collector current can be controlled accurately by the magnitude of the base current, which is the driving force for the collector current. The current gain of the device is typically in the range of 80-150 with a maximum current gain of 250. The forward voltage drop between the collector and emitter is typically around 0.7V to 0.9V. Its maximum collector-emitter voltage rating is 40V with a maximum collector dissipation power rating of 1.5W.

The FZT688BTC, with its wide range of operating parameters, relative high current gain, and high switching speed, is highly suitable for use in portable electronics, consumer electronics, and automotive applications. In addition, it can be used in a variety of other applications where fast switching and precise current control is necessary. It is also capable of withstanding a maximum operating temperature of 150°C.

The specific data is subject to PDF, and the above content is for reference

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