FZT658TC

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The FZT658TC is an NPN silicon high current transistor with two emitter leads and three collector leads. It can be classified as a single bipolar transistor, commonly referred to as BJT (Bipolar Junction Transistor). This type of transistor is commonly used in amplifying or switching applications thanks to its high current gain and low voltage drop characteristics, which make it suitable for many types of circuits.

Its application field mainly involves amplifiers and switches where high current capability and low voltage drop is essential, and it is often used for multiple-stage amplifiers, especially where a number of identical transistors need to be used, as it guarantees a consistent performance across all transistors in the amplifying chain. It is also used for signal-level switching and as an on/off switch for low-power devices, such as relays.

The FZT658TC has a typical on state voltage drop of just 0.25 volts, and can support currents of up to 800 mA. It boasts a gain of over 900 at current levels of 5 mA.

The working principle behind the transistor relies on two basic properties of doped semiconductor materials – holes, as found in P-type material, and electrons, as in N-type material. An NPN transistor is formed when two sections of N-type material are sandwiched between a central P-type piece. By placing a positive voltage on the P-type base and allowing negative current to flow from the collector to the emitter, you create a population of electrons near the base, creating a strong current from the collector to the emitter. This phenomenon is known as ‘forward biasing’.

The FZT658TC uses this basic principle for amplifying and switching. By placing a small current flow through its base, a much larger current is allowed to flow from the collector to the emitter. This amplified current can be used for various purposes, such as driving relays, as well as for amplifying signals. The transistor can also be used for switching its current on and off with a small voltage change.

In summary, the FZT658TC is an NPN silicon high current transistor with two emitter leads and three collector leads, which can be classified as a single bipolar transistor. This transistor is mainly used in amplifier and switch applications, owing to its high gain and low voltage drop characteristics. Its working principle is based on the concept of ‘forward biasing’ which occurs when a positive voltage is applied to the base and a negative current is allowed to flow from the collector to the emitter, thereby creating a population of electrons near the base which in turn creates a much larger current flowing from the collector to the emitter.

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