FZT653TC Allicdata Electronics
Allicdata Part #:

FZT653TC-ND

Manufacturer Part#:

FZT653TC

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 100V 2A SOT223
More Detail: Bipolar (BJT) Transistor NPN 100V 2A 175MHz 2W Sur...
DataSheet: FZT653TC datasheetFZT653TC Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Power - Max: 2W
Frequency - Transition: 175MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: FZT653
Description

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The FZT653TC is a NPN Darlington transistor designed for use in applications requiring a high degree of amplification. This device has a collector-base breakdown voltage of 500 volts, a current gain-bandwidth product of 20 MHz, and high gain of 650 at a collector current of 1mA. It is suitable for switching and high-current power applications such as linear and switching regulators, 7-segment displays, and DC-DC converters.

The FZT653TC is a bipolar junction transistor consisting of three layers of semiconductor material that form both a junction and an electrical connection between them. It is a type of field-effect transistor (FET) that has one input and two outputs; the output is controlled by the input and the current flow through the output and to ground.

This device is typically used in switching and high-current power applications such as linear and switching regulators, 7-segment displays, and DC-DC converters. It is characterized by a high breakdown voltage of 500 volts, a current gain-bandwidth product of 20 MHz, and a high gain of 650 at a collector current of 1mA. The FZT653TC can be used as an oscillatory switch, driving power transistors, or operated in saturation mode for high-linear current-transfer characteristics.

The FZT653TC is constructed with a NPN transistor with two terminals: the emitter and collector. The emitter is positively charged, and electrons are injected into the base (which serves as an electron source). The collector is negatively charged, and the resulting current flow is controlled by the base-emitter bias, which allows current to flow through the collector-emitter paths. In this way, the Darlington transistor amplifies signals by allowing the base current to control larger collector currents.

The FZT653TC is a popular device in the field of signal amplification, mainly due to its low noise, low-noise distortion, and high input impedance. It is also often used for driving low-power devices such as digital logic circuits and motors. The device is also frequently used in consumer audio amplifiers and in telecommunications equipment such as modems, telephone switching circuits, and interface cards.

In conclusion, the FZT653TC is a NPN Darlington transistor that is suitable for high-current power applications such as linear and switching regulators, 7-segment displays, and DC-DC converters. It has a high collector-base breakdown voltage of 500 volts, a current gain-bandwidth product of 20 MHz, and a high gain of 650 at a collector current of 1mA. It is suitable for use in switching and high-current power applications such as linear and switching regulators, 7-segment displays, and DC-DC converters. It is also widely used in consumer audio amplifiers and in telecommunications equipment.

The specific data is subject to PDF, and the above content is for reference

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