GWM100-0085X1-SMD SAM Allicdata Electronics
Allicdata Part #:

GWM100-0085X1-SMDSAM-ND

Manufacturer Part#:

GWM100-0085X1-SMD SAM

Price: $ 20.40
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET 6N-CH 85V 103A ISOPLUS
More Detail: Mosfet Array 6 N-Channel (3-Phase Bridge) 85V 103A...
DataSheet: GWM100-0085X1-SMD SAM datasheetGWM100-0085X1-SMD SAM Datasheet/PDF
Quantity: 1000
1 +: $ 18.54720
Stock 1000Can Ship Immediately
$ 20.4
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 85V
Current - Continuous Drain (Id) @ 25°C: 103A
Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: --
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 17-SMD, Gull Wing
Supplier Device Package: ISOPLUS-DIL™
Base Part Number: GWM100
Description

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GWM100-0085X1-SMD SAM is a type of field effect transistor (FET) array sold by China-based Good Way Microelectronics. The array consists of two field-effect transistors (FETs) and two diodes in a single package. The FETs are intended for subminiature applications and are suitable for audio amplifiers, motor control and power management. The transistors feature low power consumption, low on-resistance, wide operating range and low capacitance levels.

The array is designed to provide a source of current that is controlled by the voltage applied to the gate of the FET. The gate of the FET will turn the FET “on” if the voltage applied is such that the channel between the source and drain regions of the FET is conductive. This allows current to flow between the drain and source region, thus providing a “controlled” current source.The FET in the array is typically a n-channel type, which means that the current conducted between the source and drain regions will be of a negative polarity. The second FET in the array is typically a p-channel type, which means the current between the source and drain regions will be of a positive polarity.

A diode can also be added to the array to provide further protection against reverse polarity currents. The diodes will conduct current if either the source-drain or drain-source junctions are forward-biased. As a result, the diode will create a barrier of protection against current flowing in the wrong direction, thus increasing the safety and efficiency of the circuit.

To further enhance the protection of the FET array, Good Way Microelectronics has added an integrated heat sink to the GWM100-0085X1-SMD SAM. This heat sink helps to disperse the heat generated when the FETs are switched on, thus preventing them from overheating and being damaged. The heat sink also increases the efficiency of the circuit by allowing more current to flow through the FETs without them becoming damaged.

The GWM100-0085X1-SMD SAM FET array is an excellent choice for subminiature applications such as audio amplifiers, motor control and power management. The array offers low power consumption, low on-resistance and high efficiency. The integrated heat sink provides added protection against overheating and enhances the efficiency of the circuit. The array is also well suited for use in both positive and negative polarity applications. As such, it is a versatile and reliable solution for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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