GWM160-0055X1-SMDSAM

Series:	--
Packaging:	Tube
Part Status:	Obsolete
FET Type:	6 N-Channel (3-Phase Bridge)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	55V
Current - Continuous Drain (Id) @ 25°C:	150A
Rds On (Max) @ Id, Vgs:	3.3 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:	4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	105nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	--
Power - Max:	--
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	17-SMD, Gull Wing
Supplier Device Package:	ISOPLUS-DIL™
Base Part Number:	GWM160

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Introduction
The GWM160-0055X1-SMDSAM is a part of the GWM160-0055X1-SMDSAM array family, which belongs to transistors-FETs, MOSFETs-Arrays. This type of array is designed for applications involving the control and amplification of electrical current. The GWM160-0055X1-SMDSAM array is composed of several silicon-based transistors that can be used in applications including motor control, energy conversion and power management.Application field
The GWM160-0055X1-SMDSAM array is suitable for applications that require efficient power management, motor control and energy conversion. It is capable of operating over a wide range of temperatures while dissipating as low power as possible. It also provides high switching speed, which enables reliable control of motors and other applications.Features
The features of GWM160-0055X1-SMDSAM array include low on-resistance, low voltage drop, high current density, high tolerance of ambience temperature, and high ESD robustness. It also provides good immunity against noise generated by motors, as well as EMI immunity. The GWM160-0055X1-SMDSAM array is particularly suitable for motor control applications due to its low voltage drop, low on-resistance, high current density, high temperature tolerance, and high ESD protection. It also provides excellent protection against noise generated by motors and EMI interference. Working principle
The GWM160-0055X1-SMDSAM array is composed of a group of transistors connected in parallel. These transistors operate by controlling the flow of electric current within the array. The transistors switch on when a voltage is applied, allowing the current to flow through them. Then, when the voltage is removed, the transistors switch off, preventing the current from flowing. The GWM160-0055X1-SMDSAM array works on the same principle as other MOSFETs, with each transistor in the array having its own gate. The gate of each transistor can be controlled separately by a voltage signal. This signal is used to control the amount of current flowing through each transistor. Depending on the type of signal received, the transistors can be either turned on or off, thus controlling the flow of current within the array.Bottom line
The GWM160-0055X1-SMDSAM array is an ideal solution for applications requiring efficient power management, motor control and energy conversion. It has low on-resistance, low voltage drop, high current density, high temperature tolerance, and high ESD robustness. It also provides excellent protection against noise generated by motors and EMI interference. The working principle of the GWM160-0055X1-SMDSAM array is based on the operation of several transistors connected in parallel, with each transistor having its own gate controlled by a voltage signal. This allows the transistors to be switched on or off, thus controlling the flow of current within the array.

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